Patents by Inventor Larry Burton
Larry Burton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10062749Abstract: Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating or connected to the p-type well regions by additional p-type regions. MOSFET devices are also described which have one or more p-type regions connecting the p-type well regions of the device. The p-type well regions can be arranged in a various geometric arrangements including square, diamond and hexagonal. Methods of making the devices are also described.Type: GrantFiled: June 12, 2014Date of Patent: August 28, 2018Assignee: Monolith Semiconductor Inc.Inventors: Kiran Chatty, Kevin Matocha, Sujit Banerjee, Larry Burton Rowland
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Patent number: 9751770Abstract: Seeded silicon carbide (SiC) for devices and panels are disclosed. In one example embodiment, a device includes a housing and a window. Further, the window is attached to the housing. In this example embodiment, the window of the device is fabricated using the seeded SiC having a single crystalline structure.Type: GrantFiled: April 9, 2014Date of Patent: September 5, 2017Assignee: AYMONT TECHNOLOGY, INC.Inventors: Govindhan Dhanaraj, Larry Burton Rowland, Jeffery Lee Wyatt
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Publication number: 20150291435Abstract: Seeded silicon carbide (SiC) for devices and panels are disclosed. In one example embodiment, a device includes a housing and a window. Further, the window is attached to the housing. In this example embodiment, the window of the device is fabricated using the seeded SiC having a single crystalline structure.Type: ApplicationFiled: April 9, 2014Publication date: October 15, 2015Applicant: AYMONT TECHNOLOGY, INC.Inventors: GOVINDHAN DHANARAJ, LARRY BURTON ROWLAND, JEFFERY LEE WYATT
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Publication number: 20140367771Abstract: Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating or connected to the p-type well regions by additional p-type regions. MOSFET devices are also described which have one or more p-type regions connecting the p-type well regions of the device. The p-type well regions can be arranged in a various geometric arrangements including square, diamond and hexagonal. Methods of making the devices are also described.Type: ApplicationFiled: June 12, 2014Publication date: December 18, 2014Inventors: Kiran CHATTY, Kevin MATOCHA, Sujit BANERJEE, Larry Burton ROWLAND
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Patent number: 8357945Abstract: There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.Type: GrantFiled: October 26, 2006Date of Patent: January 22, 2013Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Peter Micah Sandvik
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Patent number: 8216370Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.Type: GrantFiled: December 12, 2005Date of Patent: July 10, 2012Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Thomas Richard Anthony, Stephen Daley Arthur, Lionel Monty Levinson, John William Lucek, Larry Burton Rowland, Suresh Shankarappa Vagarali
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Patent number: 7859008Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: GrantFiled: January 9, 2007Date of Patent: December 28, 2010Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik
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Patent number: 7786503Abstract: A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.Type: GrantFiled: November 13, 2006Date of Patent: August 31, 2010Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik
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Patent number: 7638815Abstract: A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1.Type: GrantFiled: January 9, 2007Date of Patent: December 29, 2009Assignee: Momentive Performance Materials Inc.Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik
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Publication number: 20090267141Abstract: A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.Type: ApplicationFiled: July 7, 2009Publication date: October 29, 2009Applicant: GENERAL ELECTRIC COMPANYInventors: Kevin Sean Matocha, Jody Alan Fronheiser, Larry Burton Rowland, Jesse Berkley Tucker, Stephen Daley Arthur, Zachary Matthew Stum
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Patent number: 7595241Abstract: A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.Type: GrantFiled: August 23, 2006Date of Patent: September 29, 2009Assignee: General Electric CompanyInventors: Kevin Sean Matocha, Jody Alan Fronheiser, Larry Burton Rowland, Jesse Berkley Tucker, Stephen Daley Arthur, Zachary Matthew Stum
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Patent number: 7482634Abstract: The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.Type: GrantFiled: September 24, 2004Date of Patent: January 27, 2009Assignee: Lockheed Martin CorporationInventors: Robert John Wojnarowski, Stanton Earl Weaver, Jr., Abasifreke Udo Ebong, Xian An (Andrew) Cao, Steven Francis LeBoeuf, Larry Burton Rowland, Stephen D. Arthur
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Patent number: 7391058Abstract: A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, where the impurity concentrations vary across each of the interfaces, and where each of the impurity concentrations exceeds 1×1017 cm?3 for at least one single impurity in all of the regions.Type: GrantFiled: June 27, 2005Date of Patent: June 24, 2008Assignee: General Electric CompanyInventors: Larry Burton Rowland, Ahmed Elasser
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Publication number: 20080142811Abstract: A vertical MOSFET is disclosed. The MOSFET includes a gate dielectric region, a drift region having a drift region dopant concentration profile of a first conductivity type, and a JFET region having a JFET region dopant concentration profile of the first conductivity type adjacent to the gate dielectric region and disposed over the drift region. The JFET region dopant concentration profile is different from the drift region dopant concentration profile. A method for fabricating a vertical MOSFET is also disclosed.Type: ApplicationFiled: December 13, 2006Publication date: June 19, 2008Inventors: Kevin Sean Matocha, Larry Burton Rowland
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Publication number: 20080050876Abstract: A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.Type: ApplicationFiled: August 23, 2006Publication date: February 28, 2008Applicant: GENERAL ELECTRIC COMPANYInventors: Kevin Sean Matocha, Jody Alan Fronheiser, Larry Burton Rowland, Jesse Berkley Tucker, Stephen Daley Arthur, Zachary Matthew Stum
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Publication number: 20070215887Abstract: There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.Type: ApplicationFiled: October 26, 2006Publication date: September 20, 2007Applicant: General Electric CompanyInventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Peter Micah Sandvik
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Publication number: 20070145611Abstract: A gas-liquid contactor baffle includes a body having a first portion, a second portion and a middle portion, the middle portion being positioned between the first portion and the second portion. The middle portion is a corrugated sheet having a first face and a second face. The corrugated sheet has alternating ridges and open ended channels extending across each of the first face and the second face between the first portion and the second portion. The first portion has a first collection channel adapted to collect liquids from the open ended channels of the middle portion when flow is along the first face in a first direction. The second portion having a second collection channel adapted to collect liquids from the open ended channels of the middle portion when flow is along second face in a second direction.Type: ApplicationFiled: December 23, 2005Publication date: June 28, 2007Inventors: Adam Lee, Kuang-Yeu Wu, Larry Burton, Karl Chuang
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Patent number: 7175704Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.Type: GrantFiled: June 5, 2003Date of Patent: February 13, 2007Assignee: Diamond Innovations, Inc.Inventors: Mark Philip D'Evelyn, Thomas Richard Anthony, Stephen Daley Arthur, Lionel Monty Levinson, John William Lucek, Larry Burton Rowland, Suresh Shankarappa Vagarali
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Publication number: 20060169573Abstract: The contact between, for example, ascending liquid droplets of lighter liquid, as the dispersed phase, and heavier liquid, as the continuous phase, flowing across perforated trays in a flooded liquid/liquid contacting column, is enhanced by providing upstanding baffles on lower trays, interspersed with depending baffles from the trays above. The baffles cause the heavy liquid to flow along an undulating path. Flow distributing partitions extend along the undulating flow path, between the baffles, to distribute liquid flow across the trays. The roles of the lighter liquid and the heavier liquid may be reversed as phases.Type: ApplicationFiled: February 3, 2005Publication date: August 3, 2006Inventors: Adam Lee, Kuang-Yeu Wu, Larry Burton, Francis Lemon
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Patent number: 7078731Abstract: A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.Type: GrantFiled: December 13, 2004Date of Patent: July 18, 2006Assignee: General Electric CompanyInventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik