Patents by Inventor Larry C. Olsen
Larry C. Olsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11875907Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.Type: GrantFiled: October 3, 2022Date of Patent: January 16, 2024Assignee: CITY LABS, INC.Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
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Publication number: 20230360816Abstract: A device for producing electricity. The device comprises a source of tritium radioisotopes, an element Th maintained at a temperature Th, and an element Tc maintained at a temperature Tc; Tc lower than Th. The source generates heat and is disposed in thermal communication with the element Th to maintain the temperature Th. First and second doped elements, each doped with a different dopant type, are oriented in parallel relative to the heat flow path between the element Th and the element Tc and electrically connected in series According to the Seebeck effect, a voltage is generated between the first and second doped elements due to a temperature differential between the Tc and Th, causing current to flow through the serially-connected doped elements. Helium generated during generation of the radioisotopes is vented from the device.Type: ApplicationFiled: May 6, 2023Publication date: November 9, 2023Inventors: Peter Cabauy, Larry C. OLSEN, Jesse P. Grant, Johann Hernandez, Rachel Cabauy
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Patent number: 10978215Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.Type: GrantFiled: May 22, 2017Date of Patent: April 13, 2021Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
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Patent number: 9887018Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.Type: GrantFiled: October 6, 2016Date of Patent: February 6, 2018Assignee: City Labs, Inc.Inventors: Peter Cabauy, Larry C Olsen, Noren Pan
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Publication number: 20170358377Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.Type: ApplicationFiled: May 22, 2017Publication date: December 14, 2017Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
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Tritium direct conversion semiconductor device for use with gallium arsenide or germanium substrates
Patent number: 9799419Abstract: A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.Type: GrantFiled: February 17, 2015Date of Patent: October 24, 2017Assignee: City Labs, Inc.Inventors: Peter Cabauy, Larry C Olsen, Noren Pan -
Publication number: 20170092385Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.Type: ApplicationFiled: October 6, 2016Publication date: March 30, 2017Applicant: City Labs, Inc.Inventors: Peter Cabauy, Larry C. Olsen, Noren Pan
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Patent number: 9466401Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.Type: GrantFiled: June 24, 2013Date of Patent: October 11, 2016Assignee: City Labs, Inc.Inventors: Peter Cabauy, Larry C Olsen, Noren Pan
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Patent number: 9281461Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.Type: GrantFiled: December 2, 2004Date of Patent: March 8, 2016Assignee: Battelle Memorial InstituteInventors: Larry C. Olsen, John G. DeSteese, Peter M. Martin, John W. Johnston, Timothy J. Peters
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Publication number: 20150310952Abstract: A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.Type: ApplicationFiled: February 17, 2015Publication date: October 29, 2015Inventors: Peter Cabauy, Larry C. Olsen, Noren Pan
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Patent number: 8487507Abstract: A multilayer device for producing electricity. The device comprising a betavoltaic source layer for generating beta particles, and at least three semiconductor layers each having a bandgap substantially similar to a band gap of the other layers, the at least three layers comprising a doped top layer, an undoped intermediate layer and a doped bottom layer, wherein the top and the bottom layers are doped with opposite-type dopants, and wherein the top layer is closer to the betavoltaic source layer than the bottom layer.Type: GrantFiled: December 14, 2009Date of Patent: July 16, 2013Inventors: Peter Cabauy, Larry C. Olsen, Noren Pan
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Patent number: 8455751Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.Type: GrantFiled: December 2, 2003Date of Patent: June 4, 2013Assignee: Battelle Memorial InstituteInventors: Larry C. Olsen, Peter M. Martin, John W. Johnston, John G. DeSteese
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Patent number: 7851691Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.Type: GrantFiled: September 28, 2007Date of Patent: December 14, 2010Assignee: Battelle Memorial InstituteInventors: John G. DeSteese, Larry C. Olsen, Peter M. Martin
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Patent number: 7834263Abstract: A method and apparatus for providing electrical energy to an electrical device wherein the electrical energy is originally generated from temperature differences in an environment having a first and a second temperature region. A thermoelectric device having a first side and a second side wherein the first side is in communication with a means for transmitting ambient thermal energy collected or rejected in the first temperature region and the second side is in communication with the second temperature region thereby producing a temperature gradient across the thermoelectric device and in turn generating an electrical current.Type: GrantFiled: December 2, 2003Date of Patent: November 16, 2010Assignee: Battelle Memorial InstituteInventors: John G. DeSteese, Larry C. Olsen
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Publication number: 20090084421Abstract: One or more thin-film layers of thermoelectric material are formed on one or both sides of a substrate (e.g., a flexible substrate). In some embodiments, the thin-film layers have features that scatter phonons. A flexible substrate and its attached layers of thermoelectric material can be rolled up and/or arranged in a serpentine configuration for incorporation into a thermoelectric power source. In some embodiments, thin-film layers on one side of a substrate form a single, continuous thermoelectric element. In particular embodiments, one or more thin-film layers are fabricated on a substrate using an arrangement where the substrate is wrapped around a wheel and rotated one or more times past a sputtering device or other device for depositing material.Type: ApplicationFiled: September 28, 2007Publication date: April 2, 2009Inventors: Larry C. Olsen, John G. DeSteese
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Publication number: 20080173537Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.Type: ApplicationFiled: September 28, 2007Publication date: July 24, 2008Inventors: John G. DeSteese, Larry C. Olsen, Peter M. Martin