Patents by Inventor Larry Clifford Leighton

Larry Clifford Leighton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical bipolar transistor having a field shield between the metallic interconnecting layer and the insulation oxide
    Patent number: 6239475
    Abstract: The present invention relates to a vertical bipolar power transistor primarily intended for radio frequency applications and to a method for manufacturing, the bipolar power transistor. The power transistor comprises a substrates, a collector layer of a first conductivity type on the substrate, a base of a second conductivity type electrically connected to the collector layer, an emitter of the first conductivity type electrically connected to the base, the base and the emitter each being electrically connected to a metallic interconnecting layer, the interconnecting layers being at least in parts separated from the collector layer by an insulation oxide. According to the invention the power transistor substantially comprises a field shield electrically connected to the emitter, and located between the metallic interconnecting layer of the base and the insulation oxide.
    Type: Grant
    Filed: March 13, 2000
    Date of Patent: May 29, 2001
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: Ted Johansson, Larry Clifford Leighton
  • Method for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxide
    Patent number: 6077753
    Abstract: The present invention relates to a vertical bipolar power transistor primarily intended for radio frequency applications and to a method for manufacturing the bipolar power transistor. The power transistor comprises a substrate (13), a collector layer (15) of a first conductivity type on the substrate, a base (19) of a second conductivity type electrically connected to the collector layer, an emitter (21) of the first conductivity type electrically connected to the base, the base and the emitter each being electrically connected to a metallic interconnecting layer (31,33), the interconnecting layers (31,33) being at least in parts separated from the collector layer (15) by an insulation oxide (17). According to the invention the power transistor substantially comprises a field shield (25) electrically connected to the emitter, and located between the metallic interconnecting layer of the base and the insulation oxide.
    Type: Grant
    Filed: July 2, 1998
    Date of Patent: June 20, 2000
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: Ted Johansson, Larry Clifford Leighton