Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is a laminated body comprising a substrate to be ground and a support, where the substrate may be ground to a very small (thin) thickness and can then be separated from the support without damaging the substrate. One embodiment is a laminated body comprising a substrate to be ground, a curable silicone adhesive layer in contact with the substrate to be ground, a photothermal conversion layer comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the adhesive layer, the laminated body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.

Abstract: A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin consists of silicon-bonded hydrogen and aliphatic unsaturation, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.

Abstract: A method of making an LED light emitting device is disclosed. The method includes forming a multilayer encapsulant in contact with an LED by contacting the LED with a first encapsulant that is a silicone gel, silicone gum, silicone fluid, organosiloxane, polysiloxane, polyimide, polyphosphazene, sol-gel composition, or a first photopolymerizable composition, and then contacting the first encapsulant with a second photopolymerizable composition. Each photopolymerizable composition includes a silicon-containing resin and a metal-containing catalyst, the silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation. Actinic radiation having a wavelength of 700 nm or less is applied to initiate hydrosilylation within the silicon-containing resins.

Abstract: A method of making a light emitting device is disclosed. The method includes providing a light emitting diode; providing an optical element; attaching the optical element to the light emitting diode with a photopolymerizable composition, the photopolymerizable composition comprising a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation; and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.

Abstract: A hydrophilic polymer composition is described comprising thermoplastic of thermoset polymer, and a fluorochemical additive dispersed therein. The hydrophilic composition is useful, for example, in medical and surgical drapes.

Abstract: A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin consists of silicon-bonded hydrogen and aliphatic unsaturation, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1; n is an integer greater than or equal to 0; Z is a divalent linking group; and Rf is a highly fluorinated organic group.

Abstract: Fluorinated phosphonic acid compounds, useful as treatments for substrate surfaces, have the formula: wherein: R1 is a straight chain alkylene group having from about 3 to about 21 carbon atoms, an oxa-substituted straight chain alkylene group having from about 2 to about 20 carbon atoms, or a thia-substituted straight chain alkylene group having from about 2 to about 20 carbon atoms; R2 is a perfluoroalkyl group having from about 4 to about 10 carbon atoms; R3 is hydrogen, an alkali metal cation, or an alkyl group having from about 1 to about 6 carbon atoms; and M is hydrogen or an alkali metal cation, with the proviso that if R1 is an unsubstituted straight chain alkylene group, then the sum of carbon atoms in R1 and R2 combined is at least 10.

Abstract: An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.

Abstract: Fluorinated phosphonic acid compounds, useful as treatments for substrate surfaces, have the formula: 1

Abstract: Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula: 1

Abstract: Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof.

Abstract: Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: The polymers of the present invention are characterized by having at least one pendent acetal or ketal functional group in which at least two substituents of the acetal/ketal carbon atom independently comprise at least one silicon atom. The compositions of the present invention are useful as positive working resist compositions, in particular as the top imaging layer in a bilayer resist scheme for use in the manufacture of integrated circuits.

Abstract: Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer.

Abstract: The polymers of the present invention are characterized by having at least one pendent acetal or ketal functional group in which at least two substituents of the acetal/ketal carbon atom independently comprise at least one silicon atom. The compositions of the present invention are useful as positive working resist compositions, in particular as the top imaging layer in a bilayer resist scheme for use in the manufacture of integrated circuits.