Abstract: A leadframe is provided which has an integrated resistive element incorporated within the leadframe. The resistive element suitably comprises a material that can provide a temperature coefficient of under 500 ppm/° C., preferably approximating 100 ppm/° C. or less. Exemplary embodiments of the resistive material may include Constantan or Manganin. The leadframe and integrated resistive element may be utilized in a variety of integrated circuit applications, such as a current monitoring circuit. Accordingly, variations in temperature will not dramatically affect the accuracy of any integrated circuit devices during operation. Additionally, after encapsulation of the leadframe and integrated resistive element and any such integrated circuit device, the gain of the encapsulated circuit may be suitably adjusted by various calibration techniques.

Abstract: A method of making a hybrid integrated circuit includes bonding an insulative film to a first area of a lead frame flag, a second area of the lead frame flag being exposed. A plurality of individual metalized strips and a first flag area are formed on the film. A first integrated circuit chip such as a low power MOS chip, is bonded to the first flag area, and a second integrated circuit chip, such as a high power bipolar chip, is bonded to the second area of the lead frame flag. Bonding wires are bonded to connect various bonding pads and fingers of the lead frame of the two integrated circuit chips to various metallized strips on the insulative film. The chips, bonding wires, lead frame flag, lead frame fingers, and insulative film are encapsulated in plastic by transfer molding.