Abstract: Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applications such as lasers, light emitting diodes (LEDs), phototvoltaics, photodetectors and transistors. In an exemplary embodiment, the semiconductor device can be formed by first forming an active-device structure including an active-device section disposed on a thinned III-V substrate. The active-device section can include OP and/or EP VCSEL devices. A high-quality monolithic integration structure can then be formed with low defect density through an interfacial misfit dislocation. In the high-quality monolithic integration structure, a thinned III-V mating layer can be formed over a silicon substrate.

Abstract: Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, a vertical cavity device can include two types of arrays of misfit dislocations to form high-quality semiconductor layers of the vertical cavity device. The vertical cavity device can be operated at a wavelength of about 1.6-5.0 ?m.

Abstract: An infrared radiation (“IR”) focal plane array (“FPA”) imager includes a detector array chip containing pixels having substantially one-hundred percent operability. Each of the pixels contains a plurality of interdigitated sub-detectors, where the sub-detectors are selectively operable to provide for collection of photogenerated minority charges representative of all or substantially all of the IR radiation absorbed by the detector array chip of the FPA imager.

Abstract: Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping levels to be achieved than for a bulk (random) alloy with the same average composition. Furthermore, the superlattice structures may improve the resistivity of the region, improving the current spreading of the region and hence the electronic properties of electronic devices such as optoelectronic devices.

Abstract: A semiconductor device is supported by a substrate with a smaller lattice constant. A metamorphic buffer provides a transition from the smaller lattice constant of the substrate to the larger lattice constant of the semiconductor device. In one application, the semiconductor device has a lattice constant of between approximately 6.1 and 6.35 angstroms, metamorphic buffer layers include Sb (e.g., AlInSb buffer layers), and the substrate has a smaller lattice constant (e.g., Si, InP or GaAs substrates).

Abstract: A vehicle emergency control system which remotely signals the unauthorized operation of a suitably-equipped vehicle, and which conditions the vehicle by remote control to be involuntarily retarded or stopped by an action of the unauthorized operator. Vehicles are equipped with a transmitter which broadcasts an emergency condition message in response to an unauthorized or emergency situation. The emergency message identifies the vehicle, and may also identify the nature of the emergency condition. The emergency message is received at a central location, from which a coded command signal can be transmitted to a receiver in the vehicle to disable the operation of the particular vehicle from which the emergency message emanated. The command signal conditions the brake accelerator, or some other vehicle control to be retained in a retarded position when that control is next operated.