Abstract: The present invention relates to the non-invasive analysis of materials in both in-vivo and ex-vivo configurations that show reduced sensitivity to sample placement within the sample measurement location. Embodiments of the apparatus make use of paired magnetic configurations and/or paired electrode configurations. Methods are described that compensate for the variation in sample size, and volume to give accurate and repeatable results.

Abstract: A sputtering apparatus allowing thick targets and method of making the same. The apparatus includes a sputtering target with a glow discharge plasma formed thereon during sputtering. The sputtering target is disposed in a plane, with a front of the plane defined as the side on which the glow discharge plasma is located during sputtering and a back of the plane defined as the opposite side. The sputtering apparatus also includes a magnetic circuit with an electrically floating center pole and an electrically floating outside pole. Both the center pole and outside pole are at least partially disposed on the front side of the plane defined by the sputtering target.

Abstract: A hollow cathode magnetron (HCM) sputter source includes a main magnet positioned near the sidewall of the hollow cathode target and a pair of rotating magnet arrays that are positioned near the closed end of the hollow cathode target. One of the arrays produces a magnetic field that is aligned with (aids) the magnetic field produced by the main magnet; the other arrays produce a magnetic field that is aligned against (bucks) the magnetic field produced by the main magnet. Field lines produced by the magnet arrays contain an extension of the plasma that is controlled by the main magnet. Charged particles circulate between the two portions of the plasma. The extended plasma is thus formed over a very high percentage of the surface of the target, thereby creating an erosion profile that is highly uniform and encompasses essentially the entire face of the target. This maximizes the utilization of the target and minimizes the frequency at which the spent target must be replaced.