Patents by Inventor Larry Dworkin

Larry Dworkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High throughput TEM preparation processes and hardware for backside thinning of cross-sectional view lamella
    Patent number: 10283317
    Abstract: A method for TEM sample preparation and analysis that can be used in a FIB-SEM system without re-welds, unloads, user handling of the lamella, or a motorized flip stage. The method allows a dual beam FIB-SEM system with a typical tilt stage to be used to extract a sample to from a substrate, mount the sample onto a TEM sample holder capable of tilting, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to an electron column for STEM imaging.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: May 7, 2019
    Assignee: FEI Company
    Inventors: Paul Keady, Brennan Peterson, Guus Das, Craig Matthew Henry, Larry Dworkin, Jeff Blackwood, Stacey Stone, Michael Schmidt
  • HIGH THROUGHPUT TEM PREPARATION PROCESSES AND HARDWARE FOR BACKSIDE THINNING OF CROSS-SECTIONAL VIEW LAMELLA
    Publication number: 20170250055
    Abstract: A method for TEM sample preparation and analysis that can be used in a FIB-SEM system without re-welds, unloads, user handling of the lamella, or a motorized flip stage. The method allows a dual beam FIB-SEM system with a typical tilt stage to be used to extract a sample to from a substrate, mount the sample onto a TEM sample holder capable of tilting, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to an electron column for STEM imaging.
    Type: Application
    Filed: May 15, 2017
    Publication date: August 31, 2017
    Applicant: FEI Company
    Inventors: Paul Keady, Brennan Peterson, Guus Das, Craig Matthew Henry, Larry Dworkin, Jeff Blackwood, Stacey Stone, Michael Schmidt
  • High throughput TEM preparation processes and hardware for backside thinning of cross-sectional view lamella
    Patent number: 9653260
    Abstract: A method for TEM sample preparation and analysis that can be used in a FIB-SEM system without re-welds, unloads, user handling of the lamella, or a motorized flip stage. The method allows a dual beam FIB-SEM system with a typical tilt stage to be used to extract a sample to from a substrate, mount the sample onto a TEM sample holder capable of tilting, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to an electron column for STEM imaging.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: May 16, 2017
    Assignee: FEI Company
    Inventors: Paul Keady, Brennan Peterson, Guus Das, Craig Henry, Larry Dworkin, Jeff Blackwood, Stacey Stone, Michael Schmidt
  • High Throughput TEM Preparation Processes and Hardware for Backside Thinning of Cross-Sectional View Lamella
    Publication number: 20130248354
    Abstract: A method for TEM sample preparation and analysis that can be used in a FIB-SEM system without re-welds, unloads, user handling of the lamella, or a motorized flip stage. The method allows a dual beam FIB-SEM system with a typical tilt stage to be used to extract a sample to from a substrate, mount the sample onto a TEM sample holder capable of tilting, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to an electron column for STEM imaging.
    Type: Application
    Filed: November 30, 2012
    Publication date: September 26, 2013
    Inventors: Paul Keady, Brennan Peterson, Guus Das, Craig Henry, Larry Dworkin, Jeff Blackwood, Stacey Stone, Michael Schmidt
  • Method of eliminating photoresist poisoning in damascene applications
    Publication number: 20060205206
    Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
    Type: Application
    Filed: April 20, 2006
    Publication date: September 14, 2006
    Inventors: Ping Xu, Li-Qun Xia, Larry Dworkin, Mehul Naik