Abstract: A radiation sensor includes a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor includes a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: A dosimetry device which includes a conversion element for converting incident radiation to high energy electrons. A sensor is disposed in a path of the incident radiation to receive high energy electrons from the conversion device, to thereby generate in the sensor electrons and/or holes due primarily to the high energy electrons received from the conversion device. These electrons and/or holes generated in the sensor are then read as an indication of energy of the incident radiation. The sensor thereby receives the high energy electrons from the conversion device without conversion of the incident radiation to light energy.

Abstract: A thin-film, flat panel, pixelated detector array serving as a real-time digital imager and dosimeter for diagnostic or megavoltage X rays or gamma rays, including a plurality of photodiodes made of hydrogenated amorphous silicon arrayed in columns and rows upon a glass substrate. Each photodiode is connected to a thin film field effect transistor also located upon the glass or quartz substrate. Upper and lower metal contacts are located below and above the photodiodes to provide the photodiodes with a reverse bias. The capacitance of each photodiode when multiplied by the resistance of the field effect transistor to which it is connected yields an RC time constant, .tau..sub.RC, sufficiently small to allow fluoroscopic or radiographic imaging in real time. Specifically, ##EQU1## where P=the pixel-pixel pitch in .mu.m, where .about.25.ltoreq.p.ltoreq..about.10,000,L=the length, in cm, of one column of pixels sensors of the array, where .about.2.ltoreq.L.ltoreq..about.

Abstract: A multi-element-amorphous-silicon detector-array real-time imager and dosimeter for diagnostic or megavoltage X rays having megavoltage photons having a plurality of photodiodes made of hydrogenated amorphous silicon arrayed in columns and rows upon a glass substrate. Each photodiode is connected to a thin film field effect transistor also located upon the glass substrate. Upper and lower metal contacts are located below and above the photodiodes to provide the photodiodes with a reverse bias. The capacitance of each photodiode when multiplied by the resistance of the field effect transistor to which it is connected yields an RC time constant sufficiently small to allow real time imaging.

Abstract: A scanning, liquid ionization chamber IMAGER/DOSIMETER having a rectangular housing with a top of a thin predetermined thickness. An internal frame lies inside the rectangular housing and is welded thereto. Two planes of orthogonal wires are strung across the internal frame and immobilized thereby. These wires are electrically insulated from the rectangular housing and internal frame by non-conductive connectors. A first plane of wires serves a sensing function while the other plane of wires has a bias applied thereto one wire at a time. The rectangular housing is sealed after a liquid ionization medium completely fills any open space contained inside the rectangular housing. Non-conductive feed through wiring means are connected to the planes of wires. The first and second planes of wires are suspended in free space inside the rectangular housing.