Abstract: Contact openings in semiconductor substrates are formed through insulative layers using an etchant material. The etchant typically leaves behind a layer of etch residue which interferes with the subsequent deposition of conductive material in the opening, as well as the conductive performance of the resulting contact. A method of etch removal from semiconductor contact openings utilizes ammonia to clean the surfaces thereof of any etch residue.

Abstract: Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce vertical via sidewalls, the residue often incorporates metal. The present invention discloses a method of removing such etch residues while passivating exposed metal, including exposing the residue to ammonia. In the disclosed embodiment, ammonia and oxygen are mixed in a plasma step, such that the resist can be burned off at the same time as the residue treatment. The residue can thus be easily rinsed away.

Abstract: Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce vertical via sidewalls, the residue often incorporates metal. The present invention discloses a method of removing such etch residues while passivating exposed metal, including exposing the residue to ammonia. In the disclosed embodiment, ammonia and oxygen are mixed in a plasma step, such that the resist can be burned off at the same time as the residue treatment. The residue can thus be easily rinsed away.

Abstract: Contact openings in semiconductor substrates are formed through insulative layers using an etchant material. The etchant typically leaves behind a layer of etch residue which interferes with the subsequent deposition of conductive material in the opening, as well as the conductive performance of the resulting contact. A method of etch removal from semiconductor contact openings utilizes ammonia to clean the surfaces thereof of any etch residue.

Abstract: Contact openings in semiconductor substrates are formed through insulative layers using an etchant material. The etchant typically leaves behind a layer of etch residue which interferes with the subsequent deposition of conductive material in the opening, as well as the conductive performance of the resulting contact. A method of etch removal from semiconductor contact openings utilizes ammonia to clean the surfaces thereof of any etch residue.

Abstract: Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce vertical via sidewalls, the residue often incorporates metal. The present invention discloses a method of removing such etch residues while passivating exposed metal, including exposing the residue to ammonia. In the disclosed embodiment, ammonia and oxygen are mixed in a plasma step, such that the resist can be burned off at the same time as the residue treatment. The residue can thus be easily rinsed away.

Abstract: Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce vertical via sidewalls, the residue often incorporates metal. The present invention discloses a method of removing such etch residues while passivating exposed metal, including exposing the residue to ammonia. In the disclosed embodiment, ammonia and oxygen are mixed in a plasma step, such that the resist can be burned off at the same time as the residue treatment. The residue can thus be easily rinsed away.

Abstract: Contact openings in semiconductor substrates are formed through insulative layers using an etchant material. The etchant typically leaves behind a layer of etch residue which interferes with the subsequent deposition of conductive material in the opening, as well as the conductive performance of the resulting contact. A method of etch removal from semiconductor contact openings utilizes ammonia to clean the surfaces thereof of any etch residue.