Abstract: A memory device includes a memory array including a plurality of memory cells; and a controller coupled to the memory array, the controller configured to iteratively: determine a first error rate corresponding to a current processing level for processing data corresponding to a subset of the plurality of memory cells, determine a second error rate using an offset processing level for processing the data corresponding to the subset of the plurality of memory cells, wherein the offset processing level is offset from the current processing level by a first offset amount, and generate an updated processing level for the subset of the plurality of memory cells based on a comparison of the first error rate and the second error rate.

Abstract: A temperature related to a memory device is identified. It is determined whether the temperature related to the memory device satisfies a threshold temperature condition. Responsive to detecting that the temperature related to the memory device satisfies the threshold temperature condition, a parameter for a programming operation is adjusted from a first value to a second value to store data at the memory device.

Abstract: A first data stored at a first portion of a memory cell and a second data stored at a second portion of the memory cell are identified. A first error rate associated with first data stored at the first portion of the memory cell is determined. The first error rate is adjusted to exceed a second error rate associated with the second data stored at the second portion of the memory cell. A determination is made as to whether the first error rate exceeds a threshold. The second data stored at the second portion of the memory cell is provided for use in an error correction operation in response to determining that the first error rate exceeds the threshold.

Abstract: A memory system includes a memory array including a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: determine background records associated with a programming step, wherein the background records are for representing previous data operations, calculate a trigger measure based on the background records, wherein the trigger measure is for estimating implementation of an error recovery mechanism, and generate an adjusted step based on the trigger measure.

Abstract: Controllers, interfaces, memory devices, methods and systems are disclosed, including a controller configured to interface with a separate memory device and perform an iterative write operation to program a selected memory cell of the memory device to a target state, wherein each iteration of the write operation is configured to successively change a physical state of the selected memory cell. Other controllers, interfaces, memory device, methods and systems are also described, such as those where either a controller or a memory device can throttle a data communication operation, and/or those that utilize customized programming pulses.

Abstract: A memory system includes a memory array including a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: determine a target profile including distribution targets, wherein each of the distribution targets represent a program-verify target corresponding to a logic value for the memory cells, determine a feedback measure based on implementing a processing level for processing data, and dynamically generate an updated target based on adjusting the program-verify target according to the feedback measure.

Abstract: A memory device includes a memory array including a plurality of memory cells; and a controller coupled to the memory array, the controller configured to iteratively: determine a first error rate corresponding to a current processing level for processing data corresponding to a subset of the plurality of memory cells, determine a second error rate using an offset processing level for processing the data corresponding to the subset of the plurality of memory cells, wherein the offset processing level is offset from the current processing level by a first offset amount, and generate an updated processing level for the subset of the plurality of memory cells based on a comparison of the first error rate and the second error rate.

Abstract: A memory system includes a memory array including a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: determine background records associated with a programming step, wherein the background records are for representing previous data operations, calculate a trigger measure based on the background records, wherein the trigger measure is for estimating implementation of an error recovery mechanism, and generate an adjusted step based on the trigger measure.

Abstract: A memory system includes a memory array including a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: determine a target profile including distribution targets, wherein each of the distribution targets represent a program-verify target corresponding to a logic value for the memory cells, determine a feedback measure based on implementing a processing level for processing data, and dynamically generate an updated target based on adjusting the program-verify target according to the feedback measure.

Abstract: A memory system includes a memory array including a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: determine a target profile including distribution targets, wherein each of the distribution targets represent a program-verify target corresponding to a logic value for the memory cells, determine a feedback measure based on implementing a processing level for processing data, and dynamically generate an updated target based on adjusting the program-verify target according to the feedback measure.

Abstract: Controllers, interfaces, memory devices, methods and systems are disclosed, including a controller configured to interface with a separate memory device and perform an iterative write operation to program a selected memory cell of the memory device to a target state, wherein each iteration of the write operation is configured to successively change a physical state of the selected memory cell. Other controllers, interfaces, memory device, methods and systems are also described, such as those where either a controller or a memory device can throttle a data communication operation, and/or those that utilize customized programming pulses.

Abstract: The present disclosure includes apparatuses and methods for continuous adjusting of sensing voltages. A number of embodiments include continuously monitoring an error rate associated with sense operations performed on a group of memory cells, and continuously adjusting a sensing voltage used to determine a state of the memory cells of the group based, at least partially, on the error rate.

Abstract: Controllers, interfaces, memory devices, methods and systems are disclosed, including a controller configured to interface with a separate memory device and perform an iterative write operation to program a selected memory cell of the memory device to a target state, wherein each iteration of the write operation is configured to successively change a physical state of the selected memory cell. Other controllers, interfaces, memory device, methods and systems are also described, such as those where either a controller or a memory device can throttle a data communication operation, and/or those that utilize customized programming pulses.

Abstract: The present disclosure includes apparatuses and methods for continuous adjusting of sensing voltages. A number of embodiments include continuously monitoring an error rate associated with sense operations performed on a group of memory cells, and continuously adjusting a sensing voltage used to determine a state of the memory cells of the group based, at least partially, on the error rate.

Abstract: The present disclosure includes apparatuses and methods for continuous adjusting of sensing voltages. A number of embodiments include continuously monitoring an error rate associated with sense operations performed on a group of memory cells, and continuously adjusting a sensing voltage used to determine a state of the memory cells of the group based, at least partially, on the error rate.

Abstract: In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. A quality monitor establishes a relationship between a current value of the quality metric and a threshold value and monitors the relationship as being indicative of a degradation of the quality of the retrieved data, and selectively initiates an error response. In another embodiment, a correction value is iterated through a set of values as a quality metric is monitored such that the value of the quality metric which most closely approaches the value of the quality metric immediately subsequent to an initial writing of the data can be selected.

Abstract: The present disclosure includes apparatuses and methods for continuous adjusting of sensing voltages. A number of embodiments include continuously monitoring an error rate associated with sense operations performed on a group of memory cells, and continuously adjusting a sensing voltage used to determine a state of the memory cells of the group based, at least partially, on the error rate.

Abstract: In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. A quality monitor establishes a relationship between a current value of the quality metric and a threshold value and monitors the relationship as being indicative of a degradation of the quality of the retrieved data, and selectively initiates an error response. In another embodiment, a correction value is iterated through a set of values as a quality metric is monitored such that the value of the quality metric which most closely approaches the value of the quality metric immediately subsequent to an initial writing of the data can be selected.

Abstract: A control arrangement, for example, in a digital component that forms part of a system, draws an input current for its operation and is configured for monitoring an interface for any one of a group of commands and, upon detecting an issued one of the group of commands, operates the component for executing the issued command in an operational mode, and during an idle time on the interface, the control arrangement exclusively monitors the interface for any one of the group of commands such that the input current is limited to a leakage current. The component may draw less than 1 milliamp of current during the idle mode.

Abstract: In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. A quality monitor establishes a relationship between a current value of the quality metric and a threshold value and monitors the relationship as being indicative of a degradation of the quality of the retrieved data, and selectively initiates an error response. In another embodiment, a correction value is iterated through a set of values as a quality metric is monitored such that the value of the quality metric which most closely approaches the value of the quality metric immediately subsequent to an initial writing of the data can be selected.