Abstract: An integrated circuit package (34, 34?, 34?) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).

Abstract: Method and system for generating vehicle routes, the method including: obtaining a plurality of bookings including pick-up and drop-off location; estimating, for each combination of two bookings, a groupability by determining a cost ratio of the combination as a ratio of the cost of the combination to the sum of the cost of the two bookings taken separately, wherein a higher groupability represents a lower cost ratio, and a lower groupability represents a higher cost ratio; identifying, based on the groupability, all bookings that may not be groupable to any other booking of the plurality of bookings, as ungroupable bookings; identifying, based on the groupability, all bookings that may be groupable to at least one other booking of the plurality of bookings, as groupable bookings; determining a vehicle route by applying a vehicle routing problem solver on the groupable bookings; and adding the ungroupable bookings to the vehicle route.

Abstract: The present invention provides a bag made of a non-woven biodegradable material comprising a body portion having at least one side wall and a bottom joined together to define a storage space therebetween and an opening at the top of the body portion, wherein the bag is biodegradable and non-toxic to the environment

Abstract: A an engine management system includes a processor (8) in communication with a memory (10) that contains a program memory (28) containing instructions for the processor to implement a knock detection method. The knock detection method involves firstly sampling a torque sensor (4) that is responsive to an engine crankshaft (5). The torque sensor is sampled a number of times during a combustion stroke of one or more of cylinders (18a, . . . 18d) of the engine (16). The sampled sensor values are processed to calculate a rate of change of the torque signal and knocking is deemed to be indicated in the event of the rate of change exceeding a predetermined value. In a preferred embodiment the processor (8) is further programmed to reduce knocking once it has been detected by adjusting one or more of a number of controllers including a fuel injection controller (34), an ignition controller (12), a throttle controller (13) and an exhaust gas recirculation controller (39).

Abstract: An engine management apparatus for an internal combustion engine of a vehicle includes a microprocessor that is operable on adjustment mechanisms of the vehicle. The vehicle has a torque sensor for sensing torque generated by the engine and the adjustment mechanisms adjust parametric values related to the torque. Memory circuitry is accessible by the microprocessor. The memory circuitry stores data representing at least one set of parametric values and a range of torque values corresponding to respective parametric values in the set. A set of instructions are executable by the microprocessor so that the microprocessor cyclically retrieves a real time torque value from the torque sensor and updates the memory if the retrieved torque value is higher than a stored torque value corresponding to a current parametric value. The microprocessor adjusts the current parametric value if the retrieved torque value is lower than the stored torque value.

Abstract: An engine management apparatus for an internal combustion engine of a vehicle includes a microprocessor that is operable on adjustment mechanisms of the vehicle. The vehicle has a torque sensor for sensing torque generated by the engine and the adjustment mechanisms adjust parametric values related to the torque. Memory circuitry is accessible by the microprocessor. The memory circuitry stores data representing at least one set of parametric values and a range of torque values corresponding to respective parametric values in the set. A set of instructions are executable by the microprocessor so that the microprocessor cyclically retrieves a real time torque value from the torque sensor and updates the memory if the retrieved torque value is higher than a stored torque value corresponding to a current parametric value. The microprocessor adjusts the current parametric value if the retrieved torque value is lower than the stored torque value.

Abstract: A high density transistor component and its manufacturing method which includes the steps of forming a pad oxide layer above a silicon substrate, forming a dielectric layer above the pad oxide layer, and growing an epitaxial silicon layer above the pad oxide layer covering the pad oxide layer as well as the dielectric layer. Source/drain regions including the heavily doped source/drain and the lightly doped source/drain are formed in the epitaxial silicon layer, and a gate terminal region composed from an assembly of a gate oxide layer, a gate terminal and two spacers is formed above the epitaxial silicon layer. The channel is located in the spatial location between the dielectric layer, the gate region and the source/drain regions.

Abstract: A high density transistor component and its manufacturing method which includes the steps of forming a pad oxide layer above a silicon substrate, forming a dielectric layer above the pad oxide layer, and growing an epitaxial silicon layer above the pad oxide layer covering the pad oxide layer as well as the dielectric layer. Source/drain regions including the heavily doped source/drain and the lightly doped source/drain are formed in the epitaxial silicon layer, and a gate terminal region composed from an assembly of a gate oxide layer, a gate terminal and two spacers is formed above the epitaxial silicon layer. The channel is located in the spatial location between the dielectric layer, the gate region and the source/drain regions.

Abstract: A method of fabricating a bonding pad window, includes providing a substrate, which is metallized with a first metallization layer; forming a dielectric layer over the first metallization layer; defining the dielectric layer with a first mask to form a via; forming a plug in the via; forming a second metallization layer over the plug and the dielectric layer; patterning the second metallization layer to expose the dielectric layer; forming a passivation layer over the second metallization layer; and defining the passivation layer with the first mask to form the bonding pad window. This improves and simplifies the formation of a bonding pad window. For example, the process of forming a mask, which is used to form the bonding pad window, can be omitted. The previous via mask is used to form the bonding pad window and the internal circuit probing window at the same time.

Abstract: A shield structure is formed over each of the undoped or lightly doped polysilicon load devices of a 4T SRAM cell. The shield structure may be a metal such as aluminum, titanium or tungsten and serves to protect the undoped or lightly doped resistor within a polysilicon load device from charge-induced damage during ion implantation or plasma processing steps performed on the SRAM after formation of the polysilicon load device. The polysilicon load device is defined by depositing a layer of photoresist, exposing the photoresist through a master load mask, etching, and implanting into the exposed polysilicon. After the load device is formed, a dielectric layer is deposited and then a layer of conductive material is deposited. Dummy conductor structures are formed from the layer of conductive material using photolithography and the master load mask.