Abstract: A bulk semiconductor laser which uses optically triggered avalanche conduction to initiate the lasing action in the bulk. A semiconductor block has electrodes coupled on opposing sides and a high voltage is applied across the electrodes which is less than the voltage required for avalanche breakdown. The block is irradiated with light which produces charge carriers in the block to initiate avalanche conduction, which results in a large number of charge carriers. The charge carriers recombine to generate a second amount of electromagnetic radiation. This radiation is reflected back into the block on two opposing sides, thus resulting in a laser emission.

Abstract: A switch using an improved method of optically-triggered avalanche breakdown which can produce pulses of 100 picoseconds or longer duration that can deliver five kilovolts into 50 ohms using a standard laser diode. A semiconductor block is provided with contacts on opposing sides across which a high-voltage less than the avalanche breakdown voltage is applied. One of the electrodes is on a mesa on one side of the block. The mesa is then irradiated with electromagnetic radiation. The wavelength of the radiation and the absorption coefficient of the semiconductor block are chosen so that the absorption depth of the majority of the radiation is less than the distance between the contacts. This results in a conduction area where absorption occurs, thus applying most of the high voltage across the distance beyond where the radiation is absorbed. This provides field compression and generates an avalanche breakdown field across the remaining distance of the semiconductor block.

Abstract: A switch using an improved method of optically-triggered avalanche breakdown which can produce pulses of 100 picoseconds duration that can deliver five kilovolts into 50 ohms using a standard laser diode. A semiconductor block is provided with contacts on opposing sides across which a high-voltage less than the avalanche breakdown voltage is applied. The semiconductor block is then irradiated with electromagnetic radiation. The wavelength of the radiation and the absorption co-efficient of the semiconductor block are chosen so that the absorption depth of the majority of the radiation is less than the distance between the contacts. This results in a photoconduction area where absorption occurs, thus applying most of the high voltage across the distance beyond the photoconduction area. This provides field compression and generates an avalanche breakdown field across the remaining distance of the semiconductor block.