Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

Abstract: An exemplary computerized method is disclosed, comprising booting a destination computer in a pre-boot mode after a disk image comprising a first operating system is downloaded to the destination computer, initiating an identification module in the pre-boot mode to identify a device of the destination computer, receiving a device identifier of the device of the destination computer, identifying, using the device identifier, a driver compatible with the device, and downloading the driver to the destination computer before the destination computer is booted into the first operating system of the disk image for the first time. The method may also comprise receiving a hardware-abstraction-layer identifier of a hardware-abstraction layer of the destination computer, identifying a hardware-abstraction-layer file compatible with the hardware-abstraction layer of the destination computer, and downloading the hardware-abstraction-layer file to the destination computer.

Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Abstract: A p-type semiconductor material with enhanced thermoelectric and electric properties comprising alternating thin films of boron carbide having a dopant selected from the group of Ge and Si. Alternating layers of boron carbide are of the general form BxCy with B4C and B9C being preferred. Layers are formed by sputter depositing. The dopant is provided in the layers by co-sputtering the dopant with the boron carbide. Alternatively, the dopant may be provided by diffusing the dopant into the deposited boron carbide layers. Layers are formed on a substrate that is heated to a temperature of between about 400° C. and about 600° C. The alternating layers of boron carbide are heat treated at a temperature of about 900° C.-1000° C. for a period of about 1 hour to form a polycrystalline structure.

Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Abstract: A method and apparatus for providing electrical energy to an electrical device wherein the electrical energy is originally generated from temperature differences in an environment having a first and a second temperature region. A thermoelectric device having a first side and a second side wherein the first side is in communication with a means for transmitting ambient thermal energy collected or rejected in the first temperature region and the second side is in communication with the second temperature region thereby producing a temperature gradient across the thermoelectric device and in turn generating an electrical current.