Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises a cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

Abstract: A method of making micro-optic elements. In one embodiment, photo-resist elements each having predetermined dimensions are transferred onto a substrate. The photo-resist elements are exposed to a reflow process to shape the top surface of the elements into a curved surface. The method also involves a reactive ion etching process having controlled parameters such as a photo-resist depth and the selectivity between the substrate and photo-resist. A predetermined photo-resist depth and selectivity form a micro-optic element having a predetermined shape, preferably an elliptical or parabolic shape. In another aspect of the present invention, a micro-optic element is used to construct a micro-mirror for eliminating filamentation and promoting single mode operation of high-power broad area semiconductor lasers. The lenses and micro-mirrors produced by methods disclosed herein are configured to collimate the output of high-power lasers and promote a Gaussian intensity profile laser beam from a broad area laser beam.

Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.