Patents by Inventor Larry Shive

Larry Shive has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180117690
    Abstract: A method for producing diamond grits for use in a wafer slicing system includes adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated. The intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution. The method may include adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size, and manufacturing the diamond coated wire such that the diamond coated wire has a plurality of diamond grits that fit the final diamond size distribution.
    Type: Application
    Filed: December 29, 2017
    Publication date: May 3, 2018
    Inventors: Omid Rezvanian, Larry Shive, Rituraj Nandan, Dale A. Witte, Edward Calvin
  • Publication number: 20070221609
    Abstract: Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.
    Type: Application
    Filed: May 30, 2007
    Publication date: September 27, 2007
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Larry Shive, Brian Gilmore
  • Publication number: 20060024969
    Abstract: Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.
    Type: Application
    Filed: July 27, 2004
    Publication date: February 2, 2006
    Inventors: Larry Shive, Brian Gilmore
  • Publication number: 20050250297
    Abstract: A process for removing a contaminant selected from among copper, nickel, and a combination thereof from a silicon wafer having a surface and an interior. The process comprises cooling the silicon wafer in a controlled atmosphere from a temperature at or above an oxidation initiation temperature and initiating a flow of an oxygen-containing atmosphere at said oxidation initiation temperature to create an oxidizing ambient around the silicon wafer surface to form an oxide layer on the silicon wafer surface and a strain layer at an interface between the oxide layer and the silicon wafer interior. The cooling of the wafer is also controlled to permit diffusion of atoms of the contaminant from the silicon wafer interior to the strain layer. Then the silicon wafer is then cleaned to remove the oxide layer and the strain layer, thereby removing said contaminant having diffused to the strain layer.
    Type: Application
    Filed: May 7, 2004
    Publication date: November 10, 2005
    Inventors: Larry Shive, Brian Gilmore