Patents by Inventor Larry Vincent

Larry Vincent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Donor substrate for the transfer of a thin layer and associated transfer method
    Patent number: 12727448
    Abstract: A donor substrate for transferring a single-crystal thin layer made of a first material, onto a receiver substrate. The donor substrate comprises: —a buried weakened plane delimiting an upper portion and a lower portion of the donor substrate, —in the upper portion, a first layer, a second layer adjacent to the buried weakened plane, and a stop layer between the first layer and the second layer, the first layer composed of the first material, the stop layer being formed of a second material, —an amorphized sub-portion, made amorphous by ion implantation, having a thickness less than that of the upper portion, and including at least the first layer; the second layer comprising at least one single-crystal sub-layer, adjacent to the buried weakened plane. Two embodiments of a method may be used for transferring a single-crystal thin layer from the donor substrate.
    Type: Grant
    Filed: November 19, 2021
    Date of Patent: September 1, 2026
    Assignees: Soitec, Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
    Inventors: Larry Vincent, Shay Reboh, Lucie Le Van-Jodin, Frédéric Milesi, Ludovic Ecarnot, Gweltaz Gaudin, Didier Landru
  • DONOR SUBSTRATE FOR THE TRANSFER OF A THIN LAYER AND ASSOCIATED TRANSFER METHOD
    Publication number: 20240030061
    Abstract: A donor substrate for transferring a single-crystal thin layer made of a first material, onto a receiver substrate. The donor substrate comprises: —a buried weakened plane delimiting an upper portion and a lower portion of the donor substrate, —in the upper portion, a first layer, a second layer adjacent to the buried weakened plane, and a stop layer between the first layer and the second layer the first layer composed of the first material, the stop layer being formed of a second material, —an amorphized sub-portion, made amorphous by ion implantation, having a thickness less than that of the upper portion, and including at least the first layer; the second layer comprising at least one single-crystal sub-layer, adjacent to the buried weakened plane. Two embodiments of a method may be used for transferring a single-crystal thin layer from the donor substrate.
    Type: Application
    Filed: November 19, 2021
    Publication date: January 25, 2024
    Inventors: Larry Vincent, Shay Reboh, Lucie Le Van-Jodin, Frédéric Milesi, Ludovic Ecarnot, Gweltaz Gaudin, Didier Landru