Patents by Inventor Larry W. Austin

Larry W. Austin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and compositions for the selective etching of silicon
    Patent number: 5565060
    Abstract: Methods and compositions for the selective etching of silicon in the presence of p-doped silicon are disclosed whereby a portion of a silicon surface may be dissolved while a p-doped pattern in the surface remains substantially undissolved. The compositions comprise (a) an aqueous solution of an alkali metal hydroxide or a tetraalkylammonium hydroxide; and (b) a high flash point alcohol, phenol, polymeric alcohol, or polymeric phenol.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: October 15, 1996
    Assignee: International Business Machines Corporation
    Inventors: Larry W. Austin, Harold G. Linde, James S. Nakos
  • Methods and compositions for the selective etching of silicon
    Patent number: 5431777
    Abstract: Methods and compositions for the selective etching of silicon in the presence of p-doped silicon are disclosed whereby a portion of a silicon surface may be dissolved while a p-doped pattern in the surface remains substantially undissolved. The compositions comprise (a) an aqueous solution of an alkali metal hydroxide or a tetraalkylammonium hydroxide; and (b) a high flash point alcohol, phenol, polymeric alcohol, or polymeric phenol.
    Type: Grant
    Filed: September 17, 1992
    Date of Patent: July 11, 1995
    Assignee: International Business Machines Corporation
    Inventors: Larry W. Austin, Harold G. Linde, James S. Nakos
  • Method of anisotropically etching silicon wafers and wafer etching solution
    Patent number: 4941941
    Abstract: An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers, involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.
    Type: Grant
    Filed: October 3, 1989
    Date of Patent: July 17, 1990
    Assignee: International Business Machines Corporation
    Inventors: Larry W. Austin, Harold G. Linde