Patents by Inventor Larry W. Kapitan

Larry W. Kapitan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor layer
    Patent number: 7704824
    Abstract: The present invention provides a highly doped semiconductor layer. More specifically, the present invention provides a semiconductor layer that includes at least two impurities. Each impurity is introduced at a level below its respective degradation concentration. In this manner, the two or more impurities provide an additive conductivity to the semiconductor layer at a level above the conductivity possible with any one of the impurities alone, due to the detrimental effects that would be created by increasing the concentration of any one impurity beyond its degradation concentration.
    Type: Grant
    Filed: May 11, 2004
    Date of Patent: April 27, 2010
    Assignee: RF Micro Devices, Inc.
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Semiconductor layer
    Publication number: 20040209434
    Abstract: The present invention provides a highly doped semiconductor layer.
    Type: Application
    Filed: May 11, 2004
    Publication date: October 21, 2004
    Applicant: RF MICRO DEVICES, INC.
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Highly conductive semiconductor layer having two or more impurities
    Patent number: 6750482
    Abstract: The present invention provides a highly doped semiconductor layer. More specifically, the present invention provides a semiconductor layer that includes at least two impurities. Each impurity is introduced at a level below its respective degradation concentration. In this manner, the two or more impurities provide an additive conductivity to the semiconductor layer at a level above the conductivity possible with any one of the impurities alone, due to the detrimental effects that would be created by increasing the concentration of any one impurity beyond its degradation concentration.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: June 15, 2004
    Assignee: RF Micro Devices, Inc.
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Semiconductor layer
    Publication number: 20030201460
    Abstract: The present invention provides a highly doped semiconductor layer.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Voltage variable resistor from HBT epitaxial layers
    Patent number: 6384433
    Abstract: A voltage variable resistor formed on heterojunction bipolar transistor epitaxial material includes a current channel made on emitter material. Emitter mesas separated by a recess provide the contacts for the voltage variable resistor. Each mesa is topped with emitter metal forming the resistor contacts. The emitter mesas are layered on top of the current channel that is layered atop of a base layer. The voltage variable resistor's control contact is provided by a base contact located on the base layer and separated from the current channel.
    Type: Grant
    Filed: March 23, 2000
    Date of Patent: May 7, 2002
    Assignee: RF Micro Devices, Inc.
    Inventors: Curtis A. Barratt, Arthur E. Geissberger, Larry W. Kapitan, Michael T. Fresina, Ramond Jeffrey Vass