Abstract: The present disclosure provides methods and systems of generating high-efficiency structures for improved wireless communications. Such structures may comprise hard and chemically inert materials. Such structures may include materials having average thermal conductivities equal to or greater than about 1,000 W/mK. Such structures may comprise diamond. Such structures may comprise materials whose properties may be affected through processing such structures. Such structures may comprise devices with improved electron mobilities and efficiencies. Such structures may comprise substrate features. Such features may be configured to communicatively couple to a device or a component of a substrate. A device may comprise a radio transmitter. Some examples include satellite transmitters.

Abstract: Embodiments include but are not limited to apparatuses and systems including an integrated capacitor. An integrated capacitor may include a substrate, a first capacitor plate having four edges, and a second capacitor plate overhanging the four edges of the first capacitor plate and disposed over the first capacitor plate such that the first capacitor plate is disposed between the second capacitor plate and the substrate.

Abstract: A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors includes defining gate recesses in the structure. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.

Abstract: A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors includes defining gate recesses in the structure. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.

Abstract: A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.

Abstract: A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.