Abstract: An indirect connection to and across a photodiode array. The backside contact is used as one portion which connects to a capacitor. The capacitor forms a shunt across the bulk substrate, thus shunting across the series resistance of the substrate, and reducing the series resistance.

Abstract: An indirect connection to and across a photodiode array. The backside contact is used as one portion which connects to a capacitor. The capacitor forms a shunt across the bulk substrate, thus shunting across the series resistance of the substrate, and reducing the series resistance.

Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

Abstract: An embedded power supply for providing a voltage on a detector module within an imaging system provides the required potential to the module from charge stored on an output capacitor. Charge on the capacitor is replenished by injecting, commonly referred to as pumping, current into the capacitor by pulses of current generated by switching mode circuitry. Charge pumping into the capacitor is efficient because energy is stored in low-loss passive components and transferred into the low-loss output capacitor through low-impedance paths. Switching noise of the power supply is eliminated by turning off the charge pumping circuit during periods when such noise would disrupt the operation of the module, for example when the module is reading out image data. The output capacitor is large enough to supply the required voltage to the module for a certain period when the capacitor is not being pumped.

Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

Abstract: A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconductor die created by cleaving, sawing or otherwise separating the chip from the remainder of the wafer on which the die was fabricated. A thin metallic layer covers all or part of the edge region, thereby creating a Schottky barrier. This barrier generates a depletion region in the adjacent semiconductor material. The depletion region inherently creates an energy band distribution which preferentially accelerates minority carriers generated or near the metal-semiconductor interface towards the metal, thereby suppressing collection of these carriers by any active regions of the guard structure or by the photodiode pixels.

Abstract: An embedded power supply for providing a voltage on a detector module within an imaging system provides the required potential to the module from charge stored on an output capacitor. Charge on the capacitor is replenished by injecting, commonly referred to as pumping, current into the capacitor by pulses of current generated by switching mode circuitry. Charge pumping into the capacitor is efficient because energy is stored in low-loss passive components and transferred into the low-loss output capacitor through low-impedance paths. Switching noise of the power supply is eliminated by turning off the charge pumping circuit during periods when such noise would disrupt the operation of the module, for example when the module is reading out image data. The output capacitor is large enough to supply the required voltage to the module for a certain period when the capacitor is not being pumped.

Abstract: A scintillator assembly with at least one scintillator pixel. A reflector is preformed, and at least a portion of the scintillator material fits within the preformed reflector. The reflector assembly may have a single pre-formed unit or a plurality of subassemblies, one or a plurality of which having been pre-formed prior to insertion of one or a plurality of scintillator pixels. The reflector assembly may provide for the formation of intentional air gaps between one or a plurality of reflector walls and one or a plurality of scintillator pixels.

Abstract: A monolithic amplifier that has a high-value passive feedback resistor. The passive feedback resistor is formed from arsenic implanted polysilicon, that has a sheet resistivity on the order of 1 G? per square, and is connected to form a resistor of at least 1 G?, more preferably 7.5 G? or more. The resistor is connected as the feedback resistor of a cascode amplifier and a capacitor is formed in parallel with the feedback resistor. A low noise amplifier can therefore be formed that is DC coupled and uses a completely passive resistance feedback element.

Abstract: The invention relates to a process for the determination of serum lipoproteins by an immuno-enzymatic method. The process of the invention consists in reacting a specific antibody of the apoprotein whose amount is to be measured, fixed on a support, with, on the one hand, the compound for coupling the corresponding lipoprotein with an enzyme and, on the other hand, the analyzed sample. The amount of enzyme fixed is then an inverse function of the apoprotein content of the sample. The support with the products which are fixed thereto are separated from the rest of the reagents and the activity of the enzyme of the support is measured which is compared with standard measurements.The process is useful for serum analyses, particularly for early detection of cardiovascular disease risks.

Abstract: A method of treating peripheral vascular disease in humans by non-arterial, systemic administration of prostaglandin E.sub.1, its pharmacologically acceptable salts, lower alkyl esters or amide.