Abstract: Parallel fins or ridges are arranged on a main surface of a semiconductor substrate. Source/drain regions are provided at top and bottom portions of said fins, and wordlines comprising gate electrodes are arranged in interspaces between neighboring fins. The channels of individual memory cells are directed vertically with respect to the substrate surface.

Abstract: A semiconductor memory (26) having a plurality of memory cells (25), the semiconductor memory (26) having a substrate (1), at least one wordline (2) and first (3) and second lines (4). Each memory cell (25) of the plurality of memory cells (25) includes a fin (15) of semiconductor material, the fin (15) having a top surface (5), first (6) and second (7) opposing sidewalls and first (8) and second (9) opposing ends. The fin (15) extends along a first direction (X). Each memory cell (25) also includes a charge-trapping layer (11) disposed on the first (6) and second (7) sidewalls of said fin (15), a patterned first insulating layer (10) disposed on the top surface (5) of the fin (15), wherein the first insulating layer (10) abuts the top surface (5) of the fin (15) and the charge-trapping layer (11). Each memory cell (25) also includes a first doping region (12) coupled to the first end (8) of said fin (15) and a second doping region (13) coupled to the second end (9) of the fin (15).

Abstract: Disclosed is a semiconductor laser (10) in which the substrate (11) comprises at least three independent functional sections (17, 20, 23) in the direction of light wave propagation (A), said functional sections (17, 20, 23) serving different functions and being individually triggered by means of electrodes (15, 18, 21) via electrode leads (16, 19, 22). An intensification zone (17), a grid zone (20), and a phase adjustment zone (23) are provided as functional sections. The light wave is optically intensified in the intensification zone (17) while the phase of the advancing and returning wave is adjusted in the phase adjustment zone (23). The grid zone (20) is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone (17) and the phase adjustment zone (23).

Abstract: A semiconductor product (1) includes a plurality of wordlines extending along a first lateral direction (x) along a substrate surface (22) and also includes contact structures (3) as well as filling structures (4) therebetween. Along the first direction (x) the contact structures (3) and the filling structures (4) are arranged in alternating order between two respective wordlines. Each contact structure (3) serves to connect two active areas (23) separated by one respective trench isolation filling (24) to a respective bitline (14). Accordingly, the width of the first contact structures (3) is much larger than the width of the bitlines (14) along the first direction (x). According to embodiments of the invention, tapered upper portions (9) of the contact structures (3) are shaped, the upper portions (9) having a width being significantly smaller than the width of the contact structures (3) along the first direction (x).

Abstract: A semiconductor substrate is provided with a recess. A memory layer or memory layer sequence is applied to sidewalls and the bottom of the recess. The memory layer is formed into two separate portions at opposite sidewalls of the recess either by reducing the memory layer to sidewall spacers or by forming sidewall spacers and removing portions of the memory layer that are not covered by the spacers. A gate electrode is applied into the recess, and source/drain regions are formed by an implantation of doping atoms adjacent to the sidewalls of the recess and the remaining portions of the memory layer. The memory layer can especially be a dielectric material suitable for charge-trapping.

Abstract: A semiconductor product includes, a substrate with a first dielectric layer having contact hole fillings for contacting active areas in the substrate. A second dielectric layer with contact holes is provided therein. The contact holes have a width in a first lateral direction. The product further includes conductive lines, each conductive line passing over contact holes in the second dielectric layer and contacting a plurality of contact hole fillings in the first dielectric layer. The conductive lines have a width, in the first lateral direction, that is smaller than the width of the contact holes of the second dielectric layer. The conductive lines are in direct mechanical contact with the contact hole fillings and thereby remove the need to provide any conventional “contact to interconnect” structures.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: A straw splitter for longitudinally splitting pieces of cereal straw into separated strands for use in making a panel, board or beam is provided. A cutting shear roller and a gripping shear roller are rotatable around their longitudinal axis at different circumferential speeds. The pieces of straw are split due to shear between the cutting shear roller and the gripping shear roller. The shear rollers each comprise parallel grooves with cutting edges oriented at a predetermined angle to the roller axis such that the grooves of the gripping shear roller cross the grooves of the cutting shear roller providing a scissoring action for splitting the straw into long strands.

Abstract: A structural panel, board, or beam and method of making same, with straw that is oriented is provided. The straw is preferably oriented such that strands are parallel oriented in one or more directions. The straw strands are chopped, split, and a binder such as MDI is added.

Abstract: A method and apparatus for testing the stiffness or strength of wood panels while the panels are moving along a production line, in which the panels are moved lengthwise through a tester having lower rollers which are situated to support side or end marginal portions only of the panel while central upper rollers contacts a central region of the panel and subjects the panel to longitudinal or lateral bending. The forces corresponding to the bending are measured and used to obtain a measure of the stiffness or strength of the panel. Preferably, both a longitudinal and a lateral tester are provided, and each have two testing stations each applying a different amount of lateral bending, all of these amounts being in the substantially linear portion of the load deflection curve.

Abstract: Compositions comprising a finely divided cellulosic material and an amount of a latex containing magnesium oxychloride and/or magnesium oxysulphate effective to impart water and fire resistance to the cellulosic material are disclosed. Methods to make a water and fire resistant product are also disclosed.

Abstract: A low amplitude wave-board panel having improved bending strength and bending stiffness properties is provided. More specifically, the amplitude of the waves is substantially equal to, or less than half the thickness of said board. Preferably, the wave amplitude ranges from between 1/8" to about 1".

Abstract: Compositions comprising a finely divided cellulosic material and an amount of a latex containing magnesium oxychloride and/or magnesium oxysulphate effective to impart water and fire resistance to the cellulosic material are disclosed. Methods to make a water and fire resistant product are also disclosed.

Abstract: A flat-peaked and flat-troughed corrugated wafer board panel is provided. The panel is characterized in having a substantially uniform density.

Abstract: A corrugated metal-clad sandwich panel with a wafer composite core is provided. The single stage process for the panel manufacture involves utilizing a press platen system which is mechanically convertible between a planar and a corrugated configuration. The metal sheet is first placed on the lower platen which is in the planar configuration. The wafers and an isocyanate resin in admixture are uniformly distributed over the metal sheet. Optionally, a second metal sheet is placed over the wafer/resin mat. The platens are biased together to precompress the mat. Finally, the platens are converted from the planar to the corrugated configuration, thus forming the corrugated metal-clad sandwich panel having a waferboard core in a single stage.

Abstract: There is provided a process for improving the thickness swelling properties of a manufactured waferboard panel. The process is based on the discovery that a correlative relationship exists between the relative thickness swelling properties versus the parametric properties of time and temperature. Thus the process involves subjecting the manufactured board to a post-heat treatment at a predetermined temperature for a predetermined time in order to obtain the desired percentage reduction in thickness swelling.

Abstract: A `high density` corrugated wafer board panel is provided. The wafer board panel has a substantially uniform density ranging from between about 700 kg/m.sup.3 to 900 kg/m.sup.3. As a result of increasing the density of the panel without changing the panel weight per projected unit area, a panel having improved overall flexure performance properties is provided.

Abstract: A corrugated metal-clad sandwich panel with a wafer composite core is provided. The single stage process for the panel manufacture involves utilizing a press platen system which is mechanically convertible between a planar and a corrugated configuration. The metal sheet is first placed on the lower platen which is in the planar configuration. The wafers and an isocyanate resin in admixture are uniformly distributed over the metal sheet. Optionally, a second metal sheet is placed over the wafer/resin mat. The platens are converted from the planar to the corrugated configuration, thus forming the corrugated metal-clad sandwich panel having a waferboard core in a single stage.