Patents by Inventor Lars Bomholt
Lars Bomholt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10256293Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.Type: GrantFiled: September 7, 2017Date of Patent: April 9, 2019Assignee: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 10032859Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: GrantFiled: June 24, 2016Date of Patent: July 24, 2018Assignee: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 10018996Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.Type: GrantFiled: January 22, 2010Date of Patent: July 10, 2018Assignee: Synopsys, Inc.Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
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Publication number: 20170373136Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.Type: ApplicationFiled: September 7, 2017Publication date: December 28, 2017Applicant: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 9786734Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.Type: GrantFiled: June 23, 2015Date of Patent: October 10, 2017Assignee: SYNOPSYS, INC.Inventors: Victor Moroz, Lars Bomholt
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Publication number: 20170025496Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: ApplicationFiled: June 24, 2016Publication date: January 26, 2017Applicant: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 9379183Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: GrantFiled: September 29, 2015Date of Patent: June 28, 2016Assignee: SYNOPSYS, INC.Inventors: Victor Moroz, Lars Bomholt
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Publication number: 20160043174Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: ApplicationFiled: September 29, 2015Publication date: February 11, 2016Applicant: SYNOPSYS, INC.Inventors: Victor Moroz, Lars Bomholt
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Publication number: 20150295021Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.Type: ApplicationFiled: June 23, 2015Publication date: October 15, 2015Applicant: SYNOPSYS, INC.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 9152750Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: GrantFiled: March 7, 2014Date of Patent: October 6, 2015Assignee: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 9064808Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.Type: GrantFiled: July 25, 2011Date of Patent: June 23, 2015Assignee: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Publication number: 20140223394Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: ApplicationFiled: March 7, 2014Publication date: August 7, 2014Applicant: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 8609550Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: GrantFiled: January 13, 2012Date of Patent: December 17, 2013Assignee: Synopsys, Inc.Inventors: Victor Moroz, Lars Bomholt
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Publication number: 20130065380Abstract: A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.Type: ApplicationFiled: January 13, 2012Publication date: March 14, 2013Applicant: SYNOPSYS, INC.Inventors: Victor Moroz, Lars Bomholt
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Publication number: 20130026607Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.Type: ApplicationFiled: July 25, 2011Publication date: January 31, 2013Applicant: SYNOPSYS, INC.Inventors: Victor Moroz, Lars Bomholt
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Patent number: 8090464Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.Type: GrantFiled: September 10, 2008Date of Patent: January 3, 2012Assignee: Synopsys, Inc.Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
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Patent number: 7792595Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.Type: GrantFiled: May 27, 2005Date of Patent: September 7, 2010Assignee: Synopsys, Inc.Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
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Publication number: 20100121474Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.Type: ApplicationFiled: January 22, 2010Publication date: May 13, 2010Applicant: Synopsys, Inc.Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
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Publication number: 20090005894Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.Type: ApplicationFiled: September 10, 2008Publication date: January 1, 2009Applicant: Synopsys, Inc.Inventors: Lars BOMHOLT, Jim Chalmers, Wolfgang Fichtner