Patents by Inventor Lars EBEL
Lars EBEL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10991840Abstract: A stacked multi-junction solar cell having a first subcell and second subcell, the second subcell having a larger band gap than the first subcell. A third subcell has a larger band gap than the second subcell, and each of the subcells include an emitter and a base. The second subcell has a layer which includes a compound formed at least the elements GaInAsP, and a thickness of the layer is greater than 100 nm, and the layer is formed as part of the emitter and/or as part of the base and/or as part of the space-charge zone situated between the emitter and the base. The third subcell has a layer including a compound formed of at least the elements GaInP, and the thickness of the layer is greater than 100 nm.Type: GrantFiled: December 12, 2016Date of Patent: April 27, 2021Assignee: AZUR SPACE Solar Power GmbHInventors: Lars Ebel, Wolfgang Guter, Matthias Meusel
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Patent number: 10896986Abstract: Solar cell stack comprising III-V semiconductor layers, which includes a first subcell having a first band gap and a first lattice constant and which includes a second subcell having a second band gap and a second lattice constant, and which includes an intermediate layer sequence disposed between the two solar cells. The intermediate layer sequence including a first barrier layer and a first tunnel diode and a second barrier layer, and the layers being arranged in the specified order. The tunnel diode includes a degenerate n+ layer having a third lattice constant and a degenerate p+ layer having a fourth lattice constant, the fourth lattice constant being smaller than the third lattice constant, and the first band gap being smaller than the second band gap, and the p+ layer having a different material composition than the n+ layer.Type: GrantFiled: June 21, 2018Date of Patent: January 19, 2021Assignee: AZUR SPACE Solar Power GmbHInventors: Lars Ebel, Wolfgang Guter
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Patent number: 10833215Abstract: A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 ? greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.Type: GrantFiled: September 13, 2016Date of Patent: November 10, 2020Assignee: Azur Space Solar Power GmbHInventors: Wolfgang Guter, Matthias Meusel, Frank Dimroth, Lars Ebel, Rene Kellenbenz
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Publication number: 20180374973Abstract: Solar cell stack comprising III-V semiconductor layers, which includes a first subcell having a first band gap and a first lattice constant and which includes a second subcell having a second band gap and a second lattice constant, and which includes an intermediate layer sequence disposed between the two solar cells. The intermediate layer sequence including a first barrier layer and a first tunnel diode and a second barrier layer, and the layers being arranged in the specified order. The tunnel diode includes a degenerate n+ layer having a third lattice constant and a degenerate p+ layer having a fourth lattice constant, the fourth lattice constant being smaller than the third lattice constant, and the first band gap being smaller than the second band gap, and the p+ layer having a different material composition than the n+ layer.Type: ApplicationFiled: June 21, 2018Publication date: December 27, 2018Applicant: AZUR SPACE Solar Power GmbHInventors: Lars EBEL, Wolfgang GUTER
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Publication number: 20170170354Abstract: A stacked multi-junction solar cell having a first subcell and second subcell, the second subcell having a larger band gap than the first subcell. A third subcell has a larger band gap than the second subcell, and each of the subcells include an emitter and a base. The second subcell has a layer which includes a compound formed at least the elements GaInAsP, and a thickness of the layer is greater than 100 nm, and the layer is formed as part of the emitter and/or as part of the base and/or as part of the space-charge zone situated between the emitter and the base. The third subcell has a layer including a compound formed of at least the elements GaInP, and the thickness of the layer is greater than 100 nm.Type: ApplicationFiled: December 12, 2016Publication date: June 15, 2017Applicant: AZUR SPACE Solar Power GmbHInventors: Lars EBEL, Wolfgang GUTER, Matthias MEUSEL
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Publication number: 20160380142Abstract: A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 ? greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.Type: ApplicationFiled: September 13, 2016Publication date: December 29, 2016Applicant: AZUR SPACE Solar Power GmbHInventors: Wolfgang GUTER, Matthias MEUSEL, Frank DIMROTH, Lars EBEL, Rene KELLENBENZ
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Patent number: 8974707Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.Type: GrantFiled: March 18, 2013Date of Patent: March 10, 2015Assignee: Heraeus Deutschland GmbH & Co. KGInventors: Martin Schlott, Sabine Schneider-Betz, Uwe Konietzka, Markus Schultheis, Ben Kahle, Lars Ebel
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Publication number: 20130264200Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.Type: ApplicationFiled: March 18, 2013Publication date: October 10, 2013Applicant: Heraeus Materials Technology GmbH & Co. KGInventors: Martin SCHLOTT, Sabine SCHNEIDER-BETZ, Uwe KONIETZKA, Markus SCHULTHEIS, Ben KAHLE, Lars EBEL