Abstract: Laser-based material processing systems including a Micro-Electromechanical System devices (MEMs) based reflective, optical modulator with dielectric mirrors for high power handling and methods of manufacturing and using the same are described. Generally, the system includes a workpiece support, a laser, a workpiece support, a laser, a MEMs based reflective, optical modulator to modulate a beam generated by the laser; and imaging optics to direct modulated light from the optical modulator onto a workpiece on the workpiece support. The optical modulator includes a number of surfaces with dielectric mirrors formed thereon to modulate the beam generated by the laser. Other embodiments are also described.

Abstract: A flow through Micro-Electromechanical Systems (MEMS) package and methods of operating a MEMS packaged using the same are provided. Generally, the package includes a cavity in which the MEMS is enclosed, an inlet through which a fluid is introduced to the cavity during operation of the MEMS and an outlet through which the fluid is removed during operation of the MEMS, wherein the package includes features that promote laminar flow of the fluid across the MEMS. The package and method are particularly useful in packaging spatial light modulators including a reflective surface and adapted to reflect and modulate a light beam incident thereon. Other embodiments are also provided.

Abstract: A flow through Micro-Electromechanical Systems (MEMS) package and methods of operating a MEMS packaged using the same are provided. Generally, the package includes a cavity in which the MEMS is enclosed, an inlet through which a fluid is introduced to the cavity during operation of the MEMS and an outlet through which the fluid is removed during operation of the MEMS. In certain embodiments, the fluid includes an gas, such as nitrogen, and the inlet and outlet are adapted to provide a flow of gas of from 0.01 Standard Cubic Centimeters per Minute (sccm) to 10000 sccm during operation of the MEMS. The package and method are particularly useful in packaging spatial light modulators including a reflective surface and adapted to reflect and modulate a light beam incident thereon. Other embodiments are also provided.

Abstract: A flow through Micro-Electromechanical Systems (MEMS) package and methods of operating a MEMS packaged using the same are provided. Generally, the package includes a cavity in which the MEMS is enclosed, an inlet through which a fluid is introduced to the cavity during operation of the MEMS and an outlet through which the fluid is removed during operation of the MEMS. In certain embodiments, the fluid includes an gas, such as nitrogen, and the inlet and outlet are adapted to provide a flow of gas of from 0.01 Standard Cubic Centimeters per Minute (sccm) to 10000 sccm during operation of the MEMS. The package and method are particularly useful in packaging spatial light modulators including a reflective surface and adapted to reflect and modulate a light beam incident thereon. Other embodiments are also provided.

Abstract: Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.

Abstract: Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.

Abstract: Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3.

Abstract: Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.

Abstract: Systems and methods for expanding an optical mode of a laser or optical amplifier to reduce leakage current. A waveguide layer is included in a laser that optically couples with the active region. The waveguide layer is configured to expand the optical mode into the layers beneath the active region. This enables the thickness of the layers above the active region to be reduced, thereby reducing leakage current. Because the waveguide layer expanded the optical mode without substantially reducing the optical confinement of the active region, the optical loss associated with the metal contact is also reduced even though the layers between the active region and the metal contact have been thinned. In one embodiment, the threshold current is reduced.

Abstract: Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.