Abstract: A process for forming a single crystal layer of one material type such as III-V semiconductor) onto a substrate of a different material type such as silicon. A substrate of a first material type is provided. At least one discrete region of catalyst material is deposited onto the substrate, the discrete region defining a seed area of the substrate. A second material type such as III-V semiconductor is grown as a single crystal nanowire onto the substrate between the substrate and catalyst material, the nanowire of second material type extending upward from the substrate with lateral dimensions not substantially exceeding the seed area. After growth of the nanowire, growth conditions are changed so as to epitaxially grow the second material type laterally from the single crystal nanowire in a direction parallel to the substrate surface.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa-shaped semiconductor region (2) is formed, a masking layer (3) is deposited over the mesa-shaped semiconductor region (2), a part (3A) of the masking layer (3) is removed that borders a side surface of the mesa-shaped semiconductor region (2) near its top and an electrically conducting connection region (4) is formed on the resulting structure forming a contact for the mesa-shaped semiconductor region (2). According to the invention after removal of said part (3A) of the masking layer (3) but before formation of the electrically conducting connection region (4) the mesa-shaped semiconductor region (2) is widened by an additional semiconductor region (5) at the side surface of the mesa-shaped semiconductor region (2) freed by removal of said part (3A) of the masking layer (3).