Abstract: A lateral high voltage semiconductor device includes a semiconductor substrate with a frontside and a semiconductor element. The semiconductor element includes: a first semiconductor region of a first conductivity type formed within the semiconductor substrate; a second semiconductor region formed within the semiconductor substrate and spaced apart from the first semiconductor region in a first lateral direction parallel to the frontside; and an extension region adjoining the second semiconductor region. The semiconductor device is configured to control a load current between the first and second semiconductor regions. The extension region extends along the frontside of the semiconductor substrate and includes at least one mesa protruding at the frontside of the semiconductor substrate.

Abstract: A semiconductor device includes: a silicon layer having a thickness in a range of 2 ?m to 200 ?m between a frontside and a backside of the silicon layer; a first device region and a second device region laterally isolated from one another in the silicon layer by an isolation structure that extends from the frontside to the backside of the silicon layer; a first insulation layer on the frontside of the silicon layer; a first patterned metallization on the first insulation layer; a second insulation layer on the backside of the silicon layer; and a second patterned metallization on the second insulation layer. The first patterned metallization provides lateral electrical routing along the frontside of the silicon layer. The second patterned metallization provides lateral electrical routing along the backside of the silicon layer. Additional embodiments of semiconductor devices and methods of producing the semiconductor devices are also described.

Abstract: A chemically tempered glass or glass-ceramic article in pane form for use as a cover pane includes a glass or glass-ceramic having a composition comprising the components SiO2, Al2O3, Li2O and Na2O, having a thickness d of 300 ?m to 1000 ?m, a compressive strength at a distance of 30 ?m from a surface of a main face CS30 of at least 60 MPa, and a compressive strength at a distance of 50 ?m from the surface of a main face CS50. The compressive strengths CS30 and CS50 of the same main face are in the following ratio V to one another: V = CS 30 CS 50 ? - 0.0006 * d + 2 , where d is the thickness of the article in ?m.

Abstract: A panel-shaped glass element is provided that includes vitreous material having a thermal expansion coefficient of less than 10×10-6 K-1 as well as two opposing surfaces. The glass element furthermore has at least one recess which runs through the glass of the glass element and has a recess wall which runs around the recess and adjoins the two opposing surfaces. The recess wall has a structure with a multiplicity of mutually adjacent rounded dome-shaped depressions. A roughness of the recess wall is formed by these depressions as well as the ridges enclosing the depressions. The recess wall has a mean roughness value (Ra) which is less than 5 µm.

Abstract: A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region having an inner region, an outer region on opposite sides of the inner region, and a transition region that laterally separates the inner region and the outer region. The electronic element includes a first doped region formed in the inner region and a second doped region formed in the outer region. The trench isolation structures are formed at least in the transition region. Each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.

Abstract: A semiconductor device includes a semiconductor layer with an inner portion, an outer portion laterally surrounding the inner portion, and a transition portion laterally surrounding the inner portion and separating the inner portion and the outer portion. A first electric element includes a first doped region formed in the inner portion and a second doped region formed in the outer portion. The first electric element is configured to at least temporarily block a voltage applied between the first doped region and the second doped region. A trench isolation structure extends from a first surface into the semiconductor layer and segments at least one of the inner portion, the transition portion, and the outer portion.

Abstract: A spacer wafer for producing spacers of electro-optical converter housings is provided. The spacer wafer is a transparent glass plate having a multiplicity of openings separated from one another and distributed in a grid so that singulated spacers are obtainable by severing sections of the glass plate along separating lines between the openings. The openings have side walls with microstructuring that has a roughness with an average roughness value Ra of less than 0.5 ?m with a measurement distance of 500 ?m.

Abstract: A method for peeling potatoes with a food processor and a food processor which comprises for food preparation a detachable food preparation vessel, a heating element for heating a food in the food preparation vessel and a rotatable tool for mixing or chopping the food in the food preparation vessel. The method includes attaching a potato peeling disc having an abrasive structure on its surface from above to the tool which is located centrally at a bottom of the food preparation vessel to establish a manually releasable, rotationally coupled connection such that in operation the potato peeling disc rotates at the same rotational speed as the tool; addition of potatoes into the food preparation vessel from above onto the potato peeling disc; motorized rotation of the tool in a first direction of rotation and peeling of the potatoes with the potato peeling disc inside the food preparation vessel.

Abstract: A potato peeling disc for peeling potatoes has a central opening formed by an inner contour of the potato peeling disc. A surface of the potato peeling disc comprises a plurality of teeth. The teeth have an orientation such that potatoes are peeled by the teeth by rotating the potato peeling disc in a first direction of rotation about a central axis which is coaxial with the central opening.

Abstract: A 3D sensor for monitoring a monitored zone is provided, wherein the 3D sensor has at least one light receiver for generating a received signal from received light from the monitored zone and has a control and evaluation unit that is configured to detect objects in the monitored zone by evaluating the received signal and to determine the shortest distance of the detected objects from at least one reference volume, and to read at least one distance calculated in advance from the reference value from a memory for the determination of the respective shortest distance of a detected object.

Abstract: A seismic sensor assembly includes a sensor body; cable connectors operatively coupled to the sensor body; and a grounding clamp operatively coupled to the cable connectors. A lightning strike kit for a seismic sensor assembly can include the grounding clamp as an electrically conductive component for electrical coupling to a base and/or a spike of a seismic sensor assembly.

Abstract: A method of structuring a glass element having a first side face and a second side face is provided. The method includes the steps of: producing a filament-shaped flaw in the glass element with a pulsed laser beam along a focus line; etching to remove glass in the filament-shaped flaw to form a wall extending from the first side face towards the second side face, the wall having a boundary line that is tapered at a vertex between the wall and the first side face with a taper angle with respect to a perpendicular of the first side face; and adjusting the taper angle by controlling a feature of the focus line. The feature is selected from a group consisting of a position of the focus line, a length of the focus line, an intensity distribution of the focus line, and any combinations thereof.

Abstract: A method of transmitting image data in a safety sensor or in a safety system is provided, in which transmission errors are recognized in that meta information is added to the image data prior to the transmission and the meta information is checked after the transmission. The image data are here transmitted by an unsafe communication link, in particular a black channel, the meta information is prepended and/or appended to the image data and/or to the partial packets, and the meta information comprises a piece of information on the structure of the image data.

Abstract: An optoelectronic sensor for detecting objects in a monitored zone is provided having at least one light receiver for generating measurement data from received light from the monitored zone and having a safe evaluation unit that has at least two processing channels for a redundant processing of the measurement data and having a comparison unit for comparing processing results of the processing channels to uncover errors in a processing channel 30a-b. The processing channels are here each configured for a determination of a signature with respect to their processing results; and the comparator unit is configured for a comparison of the signatures.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to rounded shaped transistors and methods of manufacture. The structure includes a gate structure composed of a metal electrode and a rounded ferroelectric material which overlaps an active area in a width direction into an isolation region.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to rounded shaped transistors and methods of manufacture. The structure includes a gate structure composed of a metal electrode and a rounded ferroelectric material which overlaps an active area in a width direction into an isolation region.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to devices with channel extension regions and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; and a channel below the gate structure, the channel comprising: a first channel region, adjacent to the source region; and a second channel region, adjacent to the drain region and comprising a lower threshold voltage than the first channel region.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to devices with channel extension regions and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; and a channel below the gate structure, the channel comprising: a first channel region, adjacent to the source region; and a second channel region, adjacent to the drain region and comprising a lower threshold voltage than the first channel region.

Abstract: A 3D sensor for monitoring a monitored zone is provided, wherein the 3D sensor has at least one light receiver for generating a received signal from received light from the monitored zone and has a control and evaluation unit that is configured to detect objects in the monitored zone by evaluating the received signal and to determine the shortest distance of the detected objects from at least one reference volume, and to read at least one distance calculated in advance from the reference value from a memory for the determination of the respective shortest distance of a detected object.

Abstract: A method of transmitting image data in a safety sensor or in a safety system is provided, in which transmission errors are recognized in that meta information is added to the image data prior to the transmission and the meta information is checked after the transmission. The image data are here transmitted by an unsafe communication link, in particular a black channel, the meta information is prepended and/or appended to the image data and/or to the partial packets, and the meta information comprises a piece of information on the structure of the image data.