Patents by Inventor Lars NEBRICH

Lars NEBRICH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodiode with orthogonal layer structure
    Patent number: 12672380
    Abstract: Embodiments provide a photodiode having two electrodes and an absorption volume for absorbing photons, wherein the absorption volume has a photon entry area, wherein the two electrodes are configured to generate an electric field in an active region between the two electrodes when a reverse voltage is applied, wherein the electric field runs parallel to the photon entry area, wherein, starting from a surface of a semiconductor substrate of the photodiode, the two electrodes essentially extend orthogonally to the surface in a depth direction of the semiconductor substrate, wherein the photodiode has at least one guard structure formed in the semiconductor substrate that is disposed below at least one of the at least two electrodes.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: June 30, 2026
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Ignaz Eisele, Martin Heigl, Karl Neumeier, Lars Nebrich, Leonhard Sturm-Rogon
  • PHOTODIODE WITH ORTHOGONAL LAYER STRUCTURE
    Publication number: 20230369529
    Abstract: Embodiments provide a photodiode having two electrodes and an absorption volume for absorbing photons, wherein the absorption volume has a photon entry area, wherein the two electrodes are configured to generate an electric field in an active region between the two electrodes when a reverse voltage is applied, wherein the electric field runs parallel to the photon entry area, wherein, starting from a surface of a semiconductor substrate of the photodiode, the two electrodes essentially extend orthogonally to the surface in a depth direction of the semiconductor substrate, wherein the photodiode has at least one guard structure formed in the semiconductor substrate that is disposed below at least one of the at least two electrodes.
    Type: Application
    Filed: July 28, 2023
    Publication date: November 16, 2023
    Inventors: Ignaz EISELE, Martin HEIGL, Karl NEUMEIER, Lars NEBRICH, Leonhard STURM-ROGON