Abstract: A method for fabricating a substrate structure has: providing a stack structure having a first substrate, a plastically deformable superconductor layer, and a second substrate, the first substrate having a main surface with a topographic structure and the second substrate having a main surface facing the main surface of the first substrate, wherein the first substrate main surface has a structured superconductor metallization and the second substrate main surface has a structured superconductor metallization, wherein the plastically deformable superconductor layer extends between the structured superconductor metallization of the first substrate and the structured superconductor metallization of the second substrate, and—exerting pressure to the first and second substrates for compressing the plastically deformable superconductor layer between the structured superconductor metallizations of the first and second substrates to form a mechanical and electrical superconductor connection between the structured sup

Abstract: Embodiments provide a photodiode having two electrodes and an absorption volume for absorbing photons, wherein the absorption volume has a photon entry area, wherein the two electrodes are configured to generate an electric field in an active region between the two electrodes when a reverse voltage is applied, wherein the electric field runs parallel to the photon entry area, wherein, starting from a surface of a semiconductor substrate of the photodiode, the two electrodes essentially extend orthogonally to the surface in a depth direction of the semiconductor substrate, wherein the photodiode has at least one guard structure formed in the semiconductor substrate that is disposed below at least one of the at least two electrodes.

Abstract: Embodiments provide a photodiode having two electrodes and an absorption volume for absorbing photons, wherein the absorption volume has a photon entry area, wherein the two electrodes are configured to generate an electric field in an active region between the two electrodes when a reverse voltage is applied, wherein the electric field runs parallel to the photon entry area, wherein, starting from a surface of a semiconductor substrate of the photodiode, the two electrodes essentially extend orthogonally to the surface in a depth direction of the semiconductor substrate, wherein the photodiode has at least one guard structure formed in the semiconductor substrate that is disposed below at least one of the at least two electrodes.