Abstract: In accordance with one or more embodiments herein, a method of manufacturing a photovoltaic (PV) top module, to be used together with a PV bottom module, e.g an SI-based PV bottom module, is provided. The method may include monolithically interconnecting a plurality of thin film based PV sub-cells, manufactured using a perovskite material and/or a CIGS material as solar absorbing material, in series on a substrate in order to create a PV top module including at least one first PV top sub-module, and arranging metal grid lines on top and bottom contact layers of the PV top module. The metal grid lines may be arranged either above or below the top and bottom contact layers of the PV top module.

Abstract: An in-line production apparatus and a method for composition control of copper indium gallium diselenide (CIGS) solar cells fabricated by a co-evaporation deposition process. The deposition conditions are so that a deposited Cu-excessive overall composition is transformed into to a Cu-deficient overall composition, the final CIGS film. Substrates with a molybdenum layer move through the process chamber with constant speed. The transition from copper rich to copper deficient composition on a substrate is detected by using sensors which detect a physical parameter related to the transition. A preferred embodiment sensors are provided that detect the composition of elements in the deposited layer. A controller connected to the sensors adjusts the fluxes from the evaporant sources in order provide a CIGS layer with uniform composition and thickness over the width of the substrate.

Abstract: Thin-film solar cells of the CIGS-type use two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer on top of the CIGS-layer and a second ALD ZnO-buffer layer on top of the first buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The technology also relates to a method of producing the cell and a process line for manufacturing of the cell structure.

Abstract: An in-line production apparatus and a method for composition control of copper indium gallium diselenide (CIGS) solar cells fabricated by a co-evaporation deposition process. The deposition conditions are so that a deposited Cu-excessive overall composition is transformed into to a Cu-deficient overall composition, the final CIGS film. Substrates with a molybdenum layer move through the process chamber with constant speed. The transition from copper rich to copper deficient composition on a substrate is detected by using sensors which detect a physical parameter related to the transition. Preferred embodiment sensors are provided that detect the composition of elements in the deposited layer. A controller connected to the sensors adjusts the fluxes from the evaporant sources in order provide a CIGS layer with uniform composition and thickness over the width of the substrate.

Abstract: A method for manufacturing a thin film solar cell device including a CIGS based thin film solar cell module (17). Edge deletion by selective removal of a multilayer structure (13) that includes at least a front contact (15) and a CIGS layer (7) to expose the back contact (5) in at least a peripheral area (22) in the circumferential region (21) of the module (17) adjacent to a first longitudinal thin film solar cell segment (18) allows for contacting of the module (17) by attaching at least a first contacting element (27) to the back contact (5). Preferably a blasting operation using simultaneous supply of blasting agents and gathering of debris in a blasting chamber (32) arranged on the thin film solar cell module (17) is used for the selective removal.

Abstract: The invention relates to a solar cell module and to a manufacturing method for the same, the solar cell module comprising a glass carrier (1) and a solar cell structure (2) arranged on a device side surface (11) of the glass carrier (1), characterized by a protection layer (3) arranged on a back side surface (12) of the glass carrier (1) opposite to the device side surface (11).

Abstract: The present invention provides an electrical feed-through (200) for making a durable and reliable electrical connection through a wall (227) of a vacuum chamber (225). The electrical feed-through (200) comprises a tubular member having an open end (217) and a closed end (219). At least one conductor (201) extends through the closed end (217) and is fixed thereto by a vacuum sealing joint (214). The joint (214) is arranged so that it is not in line-of-sight from the open end (217). In this way impinging elements (220) and direct heat radiation (221) is prevented from directly reaching the joint (214), thereby extending the time it takes for contamination of the joint (214) to cause problems.

Abstract: A method for manufacturing a thin film solar cell device including a CIGS based thin film solar cell module (17). Edge deletion by selective removal of a multilayer structure (13) that includes at least a front contact (15) and a CIGS layer (7) to expose the back contact (5) in at least a peripheral area (22) in the circumferential region (21) of the module (17) adjacent to a first longitudinal thin film solar cell segment (18) allows for contacting of the module (17) by attaching at least a first contacting element (27) to the back contact (5). Preferably a blasting operation using simultaneous supply of blasting agents and gathering of debris in a blasting chamber (32) arranged on the thin film solar cell module (17) is used for the selective removal.

Abstract: Thin-film solar cells of the CIGS-type use two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer on top of the CIGS-layer and a second ALD ZnO-buffer layer on top of the first buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The technology also relates to a method of producing the cell and a process line for manufacturing of the cell structure.

Abstract: The present invention provides an electrical feed-through (200) for making a durable and reliable electrical connection through a wall (227) of a vacuum chamber (225). The electrical feed-through (200) comprises a tubular member having an open end (217) and a closed end (219). At least one conductor (201) extends through the closed end (217) and is fixed thereto by a vacuum sealing joint (214). The joint (214) is arranged so that it is not in line-of-sight from the open end (217). In this way impinging elements (220) and direct heat radiation (221) is prevented from directly reaching the joint (214), thereby extending the time it takes for contamination of the joint (214) to cause problems.

Abstract: The present invention relates to a thin film solar cell and a method of manufacturing such cells. In particular the invention relates to the use of a composite back contact (314) in Cu(In,Ga)Se2 (CIGS) based thin film solar cells with thin absorber layers. The composite back contact (314) is provided between the substrate (105) and the absorber (115) and comprises: a back reflector layer (311) that enhance the reflectance at the absorber/composite back contact interface; and at least a contact layer that contact layer (310, 313) that ensures suitable electrical properties of the back contact with respect to the absorber; and/or a conductance layer (312) that ensures low sheet resistance for the in-plane current flow.

Abstract: An in-line production apparatus and a method for composition control of copper indium gallium diselenide (CIGS) solar cells fabricated by a co-evaporation deposition process. The deposition conditions are so that a deposited Cu-excessive overall composition is transformed into to a Cu-deficient overall composition, the final CIGS film. Substrates with a molybdenum layer move through the process chamber with constant speed. The transition from copper rich to copper deficient composition on a substrate is detected by using sensors which detect a physical parameter related to the transition. A preferred embodiment sensors are provided that detect the composition of elements in the deposited layer. A controller connected to the sensors adjusts the fluxes from the evaporant sources in order provide a CIGS layer with uniform composition and thickness over the width of the substrate.

Abstract: A method of manufacturing thin-film solar cells that include a layer of copper indium selenide (CuInSe.sub.2) that is applied in one manufacturing step onto a substrate that includes a metal layer that defines an electrical back contact layer of the solar cell. A layer that contains an alkali metal, such as sodium, is formed on the cell structure before the CuInSe.sub.2 layer is applied.

Abstract: Electronic circuit containing at least one Schottky field effect transistor with contact elements having different Schottky barrier heights.