Abstract: Disclosed is a station of a mesh network, wherein the station is configured to transmit and receive data packets comprising a header which comprises a mesh mode channel switch announcement element and a mesh channel switch parameter element. The station also comprises: a controller, which is configured to initiate communication with at least one second station on a first communication channel; a transceiver, which is configured to transmit and receive data packets to and from the at least one second station on the first communication channel; a counter, which is configured to monitor an amount of lost data packets. If the amount of lost data packets exceeds a drop threshold, the controller is further configured to determine if at least one communication criterion is fulfilled.

Abstract: Disclosed is a station of a mesh network, wherein the station is configured to transmit and receive data packets comprising a header which comprises a mesh mode channel switch announcement element and a mesh channel switch parameter element. The station also comprises: a controller, which is configured to initiate communication with at least one second station on a first communication channel; a transceiver, which is configured to transmit and receive data packets to and from the at least one second station on the first communication channel; a counter, which is configured to monitor an amount of lost data packets. If the amount of lost data packets exceeds a drop threshold, the controller is further configured to determine if at least one communication criterion is fulfilled.

Abstract: The present invention relates to a method and a system for operating a device. The system comprises: a mobile communication device, an internal server and an external server, the external server being adapted to generate a certificate and to send the certificate to the mobile communication device, the mobile communication device being adapted to send a device specific command comprising the certificate to the internal server, the internal server being adapted to check and validate the device specific command comprising the certificate, the internal server being adapted to send a request to the device to perform an action specified in the device specific command if the internal server validates the device specific command comprising the certificate, the device being adapted to perform the action, wherein the device specific command from the mobile communication device to the internal server is adapted to be sent via a cellular network.

Abstract: The present invention relates to a method and a system for reducing overflow caused by an appliance (100) using a liquid. The system comprises: a detector (200) arranged to detect if the appliance (100) has undesirably emitted part of the liquid, an internal server (300) being arranged to generate an alarm event in case the appliance (100) has undesirably emitted part of the liquid, and an external server. The external server is arranged to send, via a cellular network, a certificate to a predetermined first party in case an alarm event is generated. The certificate authorizes the first party to enter the location in which the appliance is located.

Abstract: The present invention relates to a method and a system for operating a device (100).

Abstract: The present invention relates to a method and a system for operating a device (100).

Abstract: The present invention relates to a method and a system for reducing overflow caused by an appliance (100) using a liquid. The system comprises: a detector (200) arranged to detect if the appliance (100) has undesirably emitted part of the liquid, an internal server (300) being arranged to generate an alarm event in case the appliance (100) has undesirably emitted part of the liquid, and an external server. The external server is arranged to send, via a cellular network, a certificate to a predetermined first party in case an alarm event is generated. The certificate authorizes the first party to enter the location in which the appliance is located.

Abstract: Systems and methods according to these exemplary embodiments provide for on-chip optical waveguides, methods of making on-chip optical waveguides, and devices including such on-chip optical waveguides. A dielectric layer formed from, e.g., transparent spacer dielectric material, forms a waveguide core and can be surrounded or substantially surrounded by a metal cladding layer. The metal cladding layer can be formed in the chip using backend metallization techniques, e.g., Damascene processing.

Abstract: Systems and methods according to these exemplary embodiments provide for on-chip optical waveguides, methods of making on-chip optical waveguides, and devices including such on-chip optical waveguides. A dielectric layer formed from, e.g., transparent spacer dielectric material, forms a waveguide core and can be surrounded or substantially surrounded by a metal cladding layer. The metal cladding layer can be formed in the chip using backend metallization techniques, e.g., Damascene processing.

Abstract: A semiconductive chip having at least one active device, and at least one bond pad located on said active device. The bond pad has at least one deformable member, and the deformable member is deformable when conductive stud is bonded to said bond pad so as to prevent damage to the active device during the bonding of the conductive stud to the bond pad, such as by an ultrasonic bonding technique. A plurality of the deformable members may define a pattern on the bond pad that deforms when the conductive stud is bonded to the bond pad.

Abstract: A power transistor includes a plurality of emitter regions and a plurality of base contacts. In order to decrease base resistance, each of the plurality of emitter regions is adjacent to at least four base contacts. The entire transistor includes multiple emitter regions, e.g., greater than or equal to about 1,000 with no upper limit wherein the actual number of emitter regions is dependent on the desired current carrying capacity. The emitter regions are directly connected in parallel to the high current carrying metal layer of the transistor through vias or metal contact studs. The size of the emitter regions should be made as small as the process design rules will allow in order to allow an increase in the perimeter to area ratio of the emitter region which, for a given current, decreases the peak current density.

Abstract: A semiconductive chip having at least one active device, and at least one bond pad located on said active device. The bond pad has at least one deformable member, and the deformable member is deformable when conductive stud is bonded to said bond pad so as to prevent damage to the active device during the bonding of the conductive stud to the bond pad, such as by an ultrasonic bonding technique. A plurality of the deformable members may define a pattern on the bond pad that deforms when the conductive stud is bonded to the bond pad.

Abstract: A power transistor includes a plurality of emitter regions and a plurality of base contacts. In order to decrease base resistance, each of the plurality of emitter regions is adjacent to at least four base contacts. The entire transistor includes multiple emitter regions, e.g., greater than or equal to about 1,000 with no upper limit wherein the actual number of emitter regions is dependent on the desired current carrying capacity. The emitter regions are directly connected in parallel to the high current carrying metal layer of the transistor through vias or metal contact studs. The size of the emitter regions should be made as small as the process design rules will allow in order to allow an increase in the perimeter to area ratio of the emitter region which, for a given current, decreases the peak current density.

Abstract: A power transistor includes a plurality of emitter regions and a plurality of base contacts. In order to decrease base resistance, each of the plurality of emitter regions is adjacent to at least four base contacts. The entire transistor includes multiple emitter regions, e.g., greater than or equal to about 1,000 with no upper limit wherein the actual number of emitter regions is dependent on the desired current carrying capacity. The emitter regions are directly connected in parallel to the high current carrying metal layer of the transistor through vias or metal contact studs. The size of the emitter regions should be made as small as the process design rules will allow in order to allow an increase in the perimeter to area ratio of the emitter region which, for a given current, decreases the peak current density.