Abstract: A photovoltaic device is described. The photovoltaic device comprises an organic-based antireflection layer. A method of making a photovoltaic device is also described.

Abstract: A photovoltaic device is described. The photovoltaic device comprises an organic-based antireflection layer. A method of making a photovoltaic device is also described.

Abstract: Methods for manufacturing a semiconductor device or a structure on a substrate are provided, e.g., with a polymer structure including a first polymer including at least one of the group of silicon, titanium and zirconium. The polymer structure is covered on sidewalls at least partially with a second polymer. The first polymer has a different etch selectivity from the second polymer. The first polymer and the second polymer are thermally treated to initiate a growth of crosslinked second polymer on the structures of the first polymer resulting in a spacer out of the second polymer around the first polymer. In a further process, one of the group of the first polymer and the second polymer is selectively removed from the other polymer by an etching process. An intermediate product is also described.

Abstract: A method of developing a resist layer includes providing a substrate comprising an exposed resist layer formed on a surface of the substrate, applying a developer to the substrate, applying a rinsing liquid to the substrate, and rotating the substrate. By influencing a rotation-induced vibration of the substrate, an agglomeration of dissolved out resist components is suppressed. Moreover, an apparatus for developing a resist layer is described.

Abstract: A method of forming a doped portion of a semiconductor substrate includes: defining a plurality of protruding portions on the substrate surface, the protruding portions having a minimum height; providing a pattern layer above the substrate surface; removing portions of the pattern layer from predetermined substrate portions; performing an ion implantation procedure such that an angle of the ions with respect to the substrate surface is less than 90°, wherein the ions are stopped by the pattern layer and by the protruding portions, the predetermined substrate portions thereby being doped with the ions; and removing the pattern layer.

Abstract: A method of forming a doped portion of a semiconductor substrate includes: defining a plurality of protruding portions on the substrate surface, the protruding portions having a minimum height; providing a pattern layer above the substrate surface; removing portions of the pattern layer from predetermined substrate portions; performing an ion implantation procedure such that an angle of the ions with respect to the substrate surface is less than 90°, wherein the ions are stopped by the pattern layer and by the protruding portions, the predetermined substrate portions thereby being doped with the ions; and removing the pattern layer.

Abstract: A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are substantially transparent to incident light at 193 nm, and a second base polymer comprises aromatic parent structures (B) which substantially absorb incident light at 193 nm and are substantially transparent to incident light at 248 nm. If such a resist (100) is applied in a coat thickness of from 50 to 400 nm to a substrate and the proportion of the second base polymer having the aromatic parent structure is between 1 and 25 mol %, a relatively high structure contrast, better stability to etching and a reduction of defects are advantageously achieved in an exposure at a wavelength of 193 nm. Exposure over the entire depth range of the resist (100) is ensured thereby.

Abstract: A method for testing the generation of scattered light by photolithographic imaging devices is disclosed. In one embodiment, measuring structures that are to be imaged in a photoresist are provided in the vicinity of deliberately structured sections that cause scattered light in the imaging device to be tested, in a photomask. The scattered light which is caused as a function of the configuration of the sections acts on the measurement structures in the photoresist and leads to changes in their CD, which is measured in the photoresist, and allows conclusions to be drawn about the scattered-light behavior of the imaging device. The method is suitable for specifically testing the lens system of the imaging device.

Abstract: A method for transferring structures from a photomask into a photoresist layer is disclosed. In one embodiment, the method involves the patterning of a photoresist layer provided on a layer stack having a topology. In order to suppress standing waves in the photoresist layer and the resist swing effect, which causes variations in the feature sizes, a thin, conformal, organic antireflection layer is applied on the layer stack by means of a known CVD method. The photoresist layer can be patterned dimensionally accurately by means of the method. The method is particularly suitable for the patterning of photoresist layers which are provided for the implantation process of source/drain regions of transistors in semiconductor technology.