Abstract: The invention describes electronic devices comprising a metal complex compound having at least one tetradentate ligand having N and/or P donors, in particular a ligand having a PPPP, NNNN, PNNP or NPPN structure, and uses of a complex of this type in the electronic field and for the generation of light.

Abstract: The invention describes electronic devices comprising a metal complex compound having at least one anionic ligand containing two P donors, having the formula (I), in which R1 to R4 are, independently of one another, an atom or radical from the group comprising hydrogen, a halogen, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=a C1-C40-hydrocarbon and X=1, 2 or 3, and E is a bridge atom from the group with carbon or boron, where an atom or radical from the group with hydrogen, halogen, —CN, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=the C1-C40-hydrocarbon and X=1, 2 or 3, is optionally bonded to the carbon, and two radicals from the group with halogen, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=the C1-C40-hydrocarbon and X=1, 2 or 3, are optionally bonded to the boron.

Abstract: The present invention relates to metal complexes in accordance with formula (1), to use thereof in electronic devices and to electronic devices, particularly organic electroluminescent devices, containing said metal complexes.

Abstract: The present invention relates to metal complexes and electronic devices, in particular organic electroluminescent devices such as OLEDs, containing said metal complexes. The following compounds of formula (1) are claimed: M(L)n(L?)m, the compound of general formula (1) containing a sub-structure M(L)n of formula (2) and L representing a mono-anionic ligand. Formula (2). The variables are defined as follows: M represents Cu, Ag, Au, Ru, Zn, Al, Ga or In; A represents a co-ordinating group which co-ordinates with M and can be substituted with one or more substituents R; the other variables are defined as cited in the claims.

Abstract: The present invention relates to metal complexes which contain elements of group IB and IVA mixed and electronic devices, in particular organic electroluminescent devices, which comprise metal complexes of this type. The compounds claimed are described by formula (1), formula (2) or formula (3), where the following applies to the symbols and indices used: M is on each occurrence, identically or differently, Cu, Ag or Au; E is on each occurrence, identically or differently, Si, Ge or Sn; the other variables are as defined in the claims.

Abstract: The invention describes electronic devices comprising a metal complex compound having at least one ligand containing an N donor and a P donor having the formula (I), in which the carbons C1 and C2 are part of an aromatic or non-aromatic ring system F1, P and N are phosphorus and nitrogen, where the nitrogen is in sp2-hybridized form, the radicals R3 and R4 are, independently of one another, hydrogen or an alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, alkylcycloalkyl, heteroalkyl, heterocycloalkyl, heteroalkylcycloalkyl, aryl, heteroaryl, aralkyl or heteroaralkyl radical having up to 40 C atoms, and R1 and R2 are, independently of one another, an atom or radical from the group comprising hydrogen, halogen, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=an alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, alkylcycloalkyl, heteroalkyl, heterocycloalkyl, heteroalkylcycloalkyl, aryl, heteroaryl, aralkyl or heteroaralkyl radical having up to 40 C atoms and

Abstract: The invention describes electronic devices comprising a metal complex compound having at least one ligand contain-ing an N donor and a P donor having the formula (I), in which the carbons C1 and C2 are part of an aromatic or non-aromatic ring system F1, P and N are phosphorus and nitrogen, where the nitrogen is in sp2-hybridised form, the radicals R3 and R4 are, indepen-dently of one another, hydrogen or an alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cyclo-alkynyl, alkylcycloalkyl, heteroalkyl, heterocycloalkyl, heteroalkylcycloalkyl, aryl, hetero-aryl, aralkyl or heteroaralkyl radical having up to 40 C atoms, and R1 and R2 are, independently of one another, an atom or radical from the group comprising hydrogen, halogen, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=an alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, alkylcycloalkyl, heteroalkyl, hetero-cycloalkyl, hetero-alkyl-cycloalkyl, aryl, heteroaryl, aralkyl or heteroaralkyl radical having up to 40 C at

Abstract: The invention describes electronic devices comprising a metal complex compound having at least one anionic ligand containing two P donors, having the formula (I), in which R1 to R4 are, independently of one another, an atom or radical from the group comprising hydrogen, a halogen, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=a C1-C40-hydrocarbon and X=1, 2 or 3, and E is a bridge atom from the group with carbon or boron, where an atom or radical from the group with hydrogen, halogen, —CN, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=the C1-C40-hydrocarbon and X=1, 2 or 3, is optionally bonded to the carbon, and two radicals from the group with halogen, R, RO—, RS—, RCO—, RCOO—, RNH—, R2N—, RCONR— and —Si(R)X(OR)3-X, where R=the C1-C40-hydrocarbon and X=1, 2 or 3, are optionally bonded to the boron.

Abstract: The invention describes electronic devices comprising a metal complex compound having at least one tetradentate ligand having N and/or P donors, in particular a ligand having a PPPP, NNNN, PNNP or NPPN structure, and uses of a complex of this type in the electronic field and for the generation of light.

Abstract: The invention describes electronic devices comprising a metal complex compound having a first metallic centre M1 and a second metallic centre M2 and a polydentate, asymmetrical ligand L1, which contains a phosphido or amido donor D1 bridging the first and second metallic centres M1 and M2, and a further donor D2, which is bonded either to the first or to the second metallic centre, and uses of a complex of this type in the electronic field and for the generation of light, and to the production of devices of this type.