Abstract: The present invention provides a method for producing an at least partially crosslinked polymer composition, having a first melt index (MI) value and a first tensile strength, comprising the steps of: a. providing an ethylene vinyl acetate (EVA) copolymer, the EVA copolymer having a second MI value and a second tensile strength and containing at least 30 wt % units derived from vinyl acetate, b. adding from 0.01 to 0.03 wt % of an organic peroxide, wherein the organic peroxide is diluted in 0.001 to 0.05 wt % of white oil, and c. blending the EVA copolymer and the organic peroxide at a temperature sufficient to initiate crosslinking. The first MI value of the at least partially crosslinked polymer composition is less than 5 g/10 min (190° C., 2.16 kg).

Abstract: The present invention relates to a new semiconductive composition, which comprises 50 to 98 weight percentage (wt %) of a polymer blend, 2 to 50 wt % of a conductive filler and 0.05 to 2 wt % of an antioxidant; wherein said polymer blend comprises 10 to 99 wt % of a multimodal high density polyolefin, which high density polyolefin has a density which is from 930 to 970 kg/m3 and a melt flow rate (MFR2@190° C.) according to ISO 1133 (190° C., 2.16 kg) which is less than 1.6 g/10 min, and 1 to 90 wt % of a thermoplastic elastomer, a process for producing a semiconductive composition, and a semiconductive jacket comprising the semiconductive composition, and a power cable comprising the semiconductive jacket or comprising the semiconductive composition, or use of a semiconductive jacket or a semiconductive composition in, for example, a power cable.

Abstract: The present invention relates to a new semiconductive composition, which comprises 50 to 98 weight percentage (wt %) of a polymer blend, 2 to 50 wt % of a conductive filler and 0.05 to 2 wt % of an antioxidant; wherein said polymer blend comprises 10 to 99 wt % of a multimodal high density polyolefin, which high density polyolefin has a density which is from 930 to 970 kg/m3 and a melt flow rate (MFR2@190° C.) according to ISO 1133 (190° C., 2.16 kg) which is less than 1.6 g/10 min, and 1 to 90 wt % of a thermoplastic elastomer, a process for producing a semiconductive composition, and a semiconductive jacket comprising the semiconductive composition, and a power cable comprising the semiconductive jacket or comprising the semiconductive composition, or use of a semiconductive jacket or a semiconductive composition in, for example, a power cable.

Abstract: The present invention relates to a method for the recrystallization of the high explosives HMX and RDX. According to the invention, the explosive is dissolved in a low molecular weight, liquid (at room temperature) lactone, after which the degree of saturation of the solution obtained, is changed by either lowering the temperature or by diluting with water.This method produces, depending on the crystallization method chosen, .beta.-HMX crystals or RDX crystals of either 50-1500 .mu.m or 5-50 .mu.m median particle diameter respectively.