Patents by Inventor Larson D. Lindholm

Larson D. Lindholm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells
    Patent number: 8211763
    Abstract: A method of forming a vertical field effect transistor includes etching an opening into semiconductor material. Sidewalls and radially outermost portions of the opening base are lined with masking material. A semiconductive material pillar is epitaxially grown to within the opening adjacent the masking material from the semiconductor material at the opening base. At least some of the masking material is removed from the opening. A gate dielectric is formed radially about the pillar. Conductive gate material is formed radially about the gate dielectric. An upper portion of the pillar is formed to comprise one source/drain region of the vertical transistor. Semiconductive material of the pillar received below the upper portion is formed to comprise a channel region of the vertical transistor. Semiconductor material adjacent the opening is formed to comprise another source/drain region of the vertical transistor. Other aspects and implementations are contemplated.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: July 3, 2012
    Assignee: Micron Technologies, Inc.
    Inventors: Larson D. Lindholm, David K. Hwang