Patents by Inventor Laszlo Dudas

Laszlo Dudas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10883941
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: January 5, 2021
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Publication number: 20200300767
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Application
    Filed: June 20, 2018
    Publication date: September 24, 2020
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Publication number: 20190391079
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Application
    Filed: June 20, 2018
    Publication date: December 26, 2019
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Patent number: 10209190
    Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: February 19, 2019
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Publication number: 20180313761
    Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.
    Type: Application
    Filed: June 21, 2018
    Publication date: November 1, 2018
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Patent number: 10018565
    Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: July 10, 2018
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Patent number: 10012593
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: July 3, 2018
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Publication number: 20160327485
    Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.
    Type: Application
    Filed: October 9, 2015
    Publication date: November 10, 2016
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Publication number: 20160328840
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Application
    Filed: May 4, 2015
    Publication date: November 10, 2016
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Patent number: 8693091
    Abstract: An optical microscope system for reconstructing an image of an object includes a means for creating a light beam profile, an optics for directing the light beam profile to the object, a moving means for implementing a scanning of the object with the light beam profile, a rotating means for enabling rotating the light beam profile and the object, and for changing the direction of scanning, and a detector for measuring the intensity of light passing through or reflected by the object. The image may be tomographically reconstructed using this intensity data associated with various directions as a plurality of projections.
    Type: Grant
    Filed: September 1, 2008
    Date of Patent: April 8, 2014
    Assignee: Szededi Tudomanyegyetem
    Inventors: Gábor Szabó, Miklós Erdélyi, Gábor Gajdátsy, László Dudás
  • Publication number: 20110261447
    Abstract: The invention is an optical microscope system (1) for reconstructing an image of an object (14), comprising: a means (8) for creating a light beam profile (7), an optics for directing the light beam profile (7) to the object (14), a moving means for implementing a scanning of the object (14) with the light beam profile (7), a rotating means for enabling rotating vis-a-vis each other the light beam profile (7) and the object (14), and for changing the direction of scanning, and a detector (5) for measuring the intensity of light passing through or reflected by the object (14). Further, the invention is a method for reconstructing the image of an object (14) by means of an optical microscope system (1).
    Type: Application
    Filed: September 1, 2008
    Publication date: October 27, 2011
    Applicant: Szededi Tudományegyetem
    Inventors: Gábor Szabó, Miklós Erdélyi, Gábor Gajdátsy, László Dudás