Patents by Inventor LATT TEE

LATT TEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of determining defective die containing non-volatile memory cells
    Patent number: 12020762
    Abstract: A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: June 25, 2024
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Yuri Tkachev, Jinho Kim, Cynthia Fung, Gilles Festes, Bernard Bertello, Parviz Ghazavi, Bruno Villard, Jean Francois Thiery, Catherine Decobert, Serguei Jourba, Fan Luo, Latt Tee, Nhan Do
  • Method of Determining Defective Die Containing Non-volatile Memory Cells
    Publication number: 20230101585
    Abstract: A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.
    Type: Application
    Filed: January 14, 2022
    Publication date: March 30, 2023
    Inventors: Yuri Tkachev, JINHO KIM, CYNTHIA FUNG, GILLES FESTES, BERNARD BERTELLO, PARVIZ GHAZAVI, BRUNO VILLARD, JEAN FRANCOIS THIERY, CATHERINE DECOBERT, SERGUEI JOURBA, FAN LUO, LATT TEE, NHAN DO