Patents by Inventor Laura Bellemo

Laura Bellemo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solderable top metal for silicon carbide semiconductor devices
    Patent number: 9496421
    Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: November 15, 2016
    Assignee: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Luigi Merlin
  • Power semiconductor switch with plurality of trenches
    Patent number: 9472403
    Abstract: A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
    Type: Grant
    Filed: November 15, 2010
    Date of Patent: October 18, 2016
    Assignee: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Giovanni Richieri, Luigi Merlin
  • Termination for SiC trench devices
    Patent number: 9419092
    Abstract: A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.
    Type: Grant
    Filed: March 1, 2006
    Date of Patent: August 16, 2016
    Assignee: Vishay-Siliconix
    Inventors: Rossano Carta, Laura Bellemo
  • Schottky diode with improved surge capability
    Patent number: 9412880
    Abstract: An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: August 9, 2016
    Assignee: Vishay-Siliconix
    Inventors: Rossano Carta, Luigi Merlin, Laura Bellemo
  • POWER SEMICONDUCTOR SWITCH
    Publication number: 20110278591
    Abstract: A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
    Type: Application
    Filed: November 15, 2010
    Publication date: November 17, 2011
    Applicant: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Giovanni Richieri, Luigi Merlin
  • SCHOTTKY DIODE WITH IMPROVED SURGE CAPABILITY
    Publication number: 20110248284
    Abstract: An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
    Type: Application
    Filed: October 12, 2010
    Publication date: October 13, 2011
    Applicant: INTERNATIONAL RECTIFIER CORP.
    Inventors: Rossano Carta, Luigi Merlin, Laura Bellemo
  • Power semiconductor switch
    Patent number: 7834376
    Abstract: A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
    Type: Grant
    Filed: March 6, 2006
    Date of Patent: November 16, 2010
    Assignee: Siliconix Technology C. V.
    Inventors: Rossano Carta, Laura Bellemo, Giovanni Richieri, Luigi Merlin
  • Schottky diode with improved surge capability
    Patent number: 7812441
    Abstract: An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
    Type: Grant
    Filed: July 5, 2006
    Date of Patent: October 12, 2010
    Assignee: Siliconix Technology C.V.
    Inventors: Rossano Carta, Luigi Merlin, Laura Bellemo
  • SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES
    Publication number: 20080286968
    Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
    Type: Application
    Filed: July 1, 2008
    Publication date: November 20, 2008
    Applicant: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Luigi Merlin
  • Solderable top metal for SiC device
    Patent number: 7394158
    Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
    Type: Grant
    Filed: October 20, 2005
    Date of Patent: July 1, 2008
    Assignee: Siliconix Technology C.V.
    Inventors: Rossano Carta, Laura Bellemo, Luigi Merlin
  • Termination for SiC trench devices
    Publication number: 20060214242
    Abstract: A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.
    Type: Application
    Filed: March 1, 2006
    Publication date: September 28, 2006
    Inventors: Rossano Carta, Laura Bellemo
  • Power semiconductor switch
    Publication number: 20060197105
    Abstract: A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
    Type: Application
    Filed: March 6, 2006
    Publication date: September 7, 2006
    Inventors: Rossano Carta, Laura Bellemo, Giovanni Richieri, Luigi Merlin
  • Solderable top metal for SiC device
    Publication number: 20060086939
    Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
    Type: Application
    Filed: October 20, 2005
    Publication date: April 27, 2006
    Inventors: Rossano Carta, Laura Bellemo, Luigi Merlin