Abstract: The invention provides 20-nor-salvinorin A, an analog of the kappa-opioid agonist salvinorin A. The 20-nor-salvinorin A is an active kappa-opioid modulator and can be used for treatment of medical conditions wherein modulation of the kappa-opioid receptor is medically indicated, such as pain, pruritis, depression, or inflammation, or conditions implicating perception and consciousness. 20-nor-salvinorin A can be less additive when used in treatment compared to a mu-opioid receptor agonist, and 20-nor-salvinorin A is more stable in vivo than is parent compound salvinorin A. The invention further provides synthetic intermediates and procedures for preparation of 20-nor-salvinorin A.

Abstract: The present technology is directed to compounds, compositions, and methods related to non-morphinan-like kappa opioid receptor (KOR) antagonists. The technology is suited to treat addiction, diuresis, depression, post traumatic stress disorder, an eating disorder, panic disorder, social anxiety disorder, general anxiety disorder, obsessive compulsive disorders, excessive or unreasonable specific phobias, and/or other conditions related to anxiety or aversion-reward responses.

Abstract: The invention provides 20-nor-salvinorin A, an analog of the kappa-opioid agonist salvinorin A. The 20-nor-salvinorin A is an active kappa-opioid modulator and can be used for treatment of medical conditions wherein modulation of the kappa-opioid receptor is medically indicated, such as pain, pruritis, depression, or inflammation, or conditions implicating perception and consciousness. 20-nor-salvinorin A can be less additive when used in treatment compared to a mu-opioid receptor agonist, and 20-nor-salvinorin A is more stable in vivo than is parent compound salvinorin A. The invention further provides synthetic intermediates and procedures for preparation of 20-nor-salvinorin A.

Abstract: The present technology is directed to compounds, compositions, and methods related to non-morphinan-like kappa opioid receptor (KOR) antagonists. The technology is suited to treat addiction, diuresis, depression, post traumatic stress disorder, an eating disorder, panic disorder, social anxiety disorder, general anxiety disorder, obsessive compulsive disorders, excessive or unreasonable specific phobias, and/or other conditions related to anxiety or aversion-reward responses.

Abstract: The present technology is directed to compounds, compositions, and methods related to non-morphinan-like kappa opioid receptor (KOR) antagonists. The technology is suited to treat addiction, diuresis, depression, post traumatic stress disorder, an eating disorder, panic disorder, social anxiety disorder, general anxiety disorder, obsessive compulsive disorders, excessive or unreasonable specific phobias, and/or other conditions related to anxiety or aversion-reward responses.

Abstract: A method for production of a thin-film battery includes providing a mount structure, applying of a first unmasked flow of a first electrode material to the mount structure in order to form a first electrode layer, applying a second unmasked flow of a battery material in order to form a battery layer, and applying a third unmasked flow of a second electrode material in order to form a second electrode layer. The applying steps are repeated in order to produce a thin-film battery which consists of a plurality of first electrode layers, a plurality of battery layers, and a plurality of second electrode layers.

Abstract: The present technology is directed to compounds, compositions, and methods related to non-morphinan-like kappa opioid receptor (KOR) antagonists. The technology is suited to treat addiction, diuresis, depression, post traumatic stress disorder, an eating disorder, panic disorder, social anxiety disorder, general anxiety disorder, obsessive compulsive disorders, excessive or unreasonable specific phobias, and/or other conditions related to anxiety or aversion-reward responses.

Abstract: A semiconductor substrate-based system for an RFID device, in particular an RFID transponder, having a semiconductor substrate and an electronic circuit system which is structured on the semiconductor substrate is provided. The semiconductor substrate-based system also has a thin-layer battery, likewise structured on the semiconductor substrate, for supplying power to the RFID device. Moreover, an RFID device having a corresponding semiconductor substrate-based system, and a method for manufacturing a corresponding semiconductor substrate-based system are provided.

Abstract: The present invention is a selective kappa opioid receptor effector, or a pharmaceutically acceptable salt thereof, useful for treating ethanol use disorder withdrawal, anxiety and/or depression, schizophrenia, mania or post-traumatic stress disorder.

Abstract: The present invention is a selective kappa opioid receptor effector, or a pharmaceutically acceptable salt thereof, useful for treating ethanol use disorder withdrawal, anxiety and/or depression, schizophrenia, mania or post-traumatic stress disorder.

Abstract: The present invention is a selective kappa opioid receptor effector, or a pharmaceutically acceptable salt thereof, useful for treating ethanol use disorder withdrawal, anxiety and/or depression, schizophrenia, mania or post-traumatic stress disorder.

Abstract: The present invention is a selective kappa opioid receptor effector, or a pharmaceutically acceptable salt thereof, useful for treating ethanol use disorder withdrawal, anxiety and/or depression, schizophrenia, mania or post-traumatic stress disorder.

Abstract: A method for production of a thin-film battery includes providing a mount structure, applying of a first unmasked flow of a first electrode material to the mount structure in order to form a first electrode layer, applying a second unmasked flow of a battery material in order to form a battery layer, and applying a third unmasked flow of a second electrode material in order to form a second electrode layer. The applying steps are repeated in order to produce a thin-film battery which consists of a plurality of first electrode layers, a plurality of battery layers, and a plurality of second electrode layers.

Abstract: A semiconductor substrate-based system for an RFID device, in particular an RFID transponder, having a semiconductor substrate and an electronic circuit system which is mounted on the semiconductor substrate is provided. The semiconductor substrate-based system also has a thin-layer battery, likewise mounted on the semiconductor substrate, for supplying power to the RFID device. Moreover, an RFID device having a corresponding semiconductor substrate-based system, and a method for manufacturing a corresponding semiconductor substrate-based system are provided.