Patents by Inventor Laura Faulk

Laura Faulk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for controlling etch selectivity
    Patent number: 7456110
    Abstract: A method for controlling an etch process comprises providing a wafer having at least a first layer and a second layer formed over the first layer. The thickness of the second layer is measured. An etch selectivity parameter is determined based on the measured thickness of the second layer. An operating recipe of an etch tool is modified based on the etch selectivity parameter. A processing line includes an etch tool, a first metrology tool, and a process controller. The etch tool is adapted to etch a plurality of wafers based on an operating recipe, each wafer having at least a first layer and a second layer formed over the first layer. The first metrology tool is adapted to measure a pre-etch thickness of the second layer. The process controller is adapted to determine an etch selectivity parameter based on the measured pre-etch thickness of the second layer and modify the operating recipe of the etch tool based on the etch selectivity parameter.
    Type: Grant
    Filed: November 23, 2004
    Date of Patent: November 25, 2008
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jeremy S. Lansford, Laura Faulk
  • Method and apparatus for controlling etch selectivity
    Publication number: 20050098535
    Abstract: A method for controlling an etch process comprises providing a wafer having at least a first layer and a second layer formed over the first layer. The thickness of the second layer is measured. An etch selectivity parameter is determined based on the measured thickness of the second layer. An operating recipe of an etch tool is modified based on the etch selectivity parameter. A processing line includes an etch tool, a first metrology tool, and a process controller. The etch tool is adapted to etch a plurality of wafers based on an operating recipe, each wafer having at least a first layer and a second layer formed over the first layer. The first metrology tool is adapted to measure a pre-etch thickness of the second layer. The process controller is adapted to determine an etch selectivity parameter based on the measured pre-etch thickness of the second layer and modify the operating recipe of the etch tool based on the etch selectivity parameter.
    Type: Application
    Filed: November 23, 2004
    Publication date: May 12, 2005
    Inventors: Jeremy Lansford, Laura Faulk