Patents by Inventor Laura M. Matz
Laura M. Matz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220332978Abstract: Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (?100 nm, ?50 nm, ?40 nm, ?30 nm, or ?20 nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.Type: ApplicationFiled: September 28, 2020Publication date: October 20, 2022Applicant: Versum Materials US, LLCInventors: KEH-YEUAN LI, MING SHIH TSAI, XIAOBO SHI, RUNG-JE YANG, CHEN YUAN HUANG, LAURA M. MATZ
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Patent number: 11401441Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.Type: GrantFiled: August 13, 2018Date of Patent: August 2, 2022Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, Laura M. Matz, Chris Keh-Yeuan Li, Ming-Shih Tsai, Pao-Chia Pan, Chad Chang-Tse Hsieh, Rung-Je Yang, Blake J. Lew, Mark Leonard O'Neill, Agnes Derecskei
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Publication number: 20190055430Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.Type: ApplicationFiled: August 13, 2018Publication date: February 21, 2019Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Laura M. Matz, Chris Keh-Yeuan Li, Ming-Shih Tsai, Pao-Chia Pan, Chad Chang-Tse Hsieh, Rung-Je Yang, Blake J. Lew, Mark Leonard O'Neill, Agnes Derecskei
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Patent number: 10072237Abstract: It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 ?m, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.Type: GrantFiled: August 3, 2016Date of Patent: September 11, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Randy Li-Kai Chang, Gene Everad Parris, Hsiu Mei Chen, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen, Laura M. Matz, Ryback Li Chang Lo, Ling-Jen Meng
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Publication number: 20170037344Abstract: It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 ?m, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.Type: ApplicationFiled: August 3, 2016Publication date: February 9, 2017Applicant: Air Products and Chemicals, Inc.Inventors: Randy Li-Kai Chang, Gene Everad Parris, Hsiu Mei Chen, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen, Laura M. Matz, Ryback Li Chang Lo, Ling-Jen Meng
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Patent number: 9018107Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: May 6, 2014Date of Patent: April 28, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Patent number: 8889235Abstract: A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing the integrated circuit substrate having a dielectric film; contacting the substrate with a barrier dielectric film precursor comprising: RxR?y(NR?R??)zSi wherein R, R?, R? and R?? are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R? cannot both be hydrogen; forming the silicon carbonitride barrier dielectric film with C/Si ratio >0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.Type: GrantFiled: May 3, 2010Date of Patent: November 18, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Anupama Mallikarjunan, Raymond Nicholas Vrtis, Laura M. Matz, Mark Leonard O'Neill, Andrew David Johnson, Manchao Xiao
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Publication number: 20140242813Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: May 6, 2014Publication date: August 28, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Patent number: 8753986Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: December 15, 2010Date of Patent: June 17, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Patent number: 8637396Abstract: A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.Type: GrantFiled: November 23, 2009Date of Patent: January 28, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Laura M. Matz, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Dino Sinatore
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Patent number: 8592058Abstract: Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.Type: GrantFiled: June 3, 2010Date of Patent: November 26, 2013Assignee: Intermolecular, Inc.Inventors: Laura M. Matz, Xiangxin Rui, Xinjian Lei, Sunil Shanker, Moo-Sung Kim, Iain Buchanan
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Patent number: 8507704Abstract: A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of ?-diketonates, ?-ketoiminates, ?-ketoesterates, ?-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.Type: GrantFiled: August 30, 2010Date of Patent: August 13, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Sergei Vladimirovich Ivanov, Xinjian Lei, Daniel P. Spence, John Anthony Thomas Norman, Laura M. Matz
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Patent number: 8471049Abstract: Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.Type: GrantFiled: December 2, 2009Date of Patent: June 25, 2013Assignee: Air Product and Chemicals, Inc.Inventors: Xinjian Lei, Daniel P. Spence, Moo-Sung Kim, Iain Buchanan, Laura M. Matz, Sergei Vladimirovich Ivanov
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Patent number: 8283260Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layType: GrantFiled: August 13, 2009Date of Patent: October 9, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Mary Kathryn Haas, Laura M. Matz, Glenn Michael Mitchell, Aiping Wu, Raymond Nicholas Vrtis, John Giles Langan
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Patent number: 8202808Abstract: Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.Type: GrantFiled: June 3, 2010Date of Patent: June 19, 2012Assignee: Intermolecular, Inc.Inventors: Laura M. Matz, Xiangxin Rui, Xinjian Lei, Sunil Shanker, Moo-Sung Kim, Iain Buchanan
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Publication number: 20110308937Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: December 15, 2010Publication date: December 22, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Patent number: 8043976Abstract: The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.Type: GrantFiled: March 18, 2009Date of Patent: October 25, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Laura M. Matz, Mark Leonard O'Neill
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Publication number: 20110212629Abstract: A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of ?-diketonates, ?-ketoiminates, ?-ketoesterates, ?-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.Type: ApplicationFiled: August 30, 2010Publication date: September 1, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Sergei Vladimirovich Ivanov, Xinjian Lei, Daniel P. Spence, John Anthony Thomas Norman, Laura M. Matz
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Publication number: 20110034023Abstract: A silicon carbide (SiC) film for use in backend processing of integrated circuit manufacturing, is generated by including hydrogen in the reaction gas mixture. This SiC containing film is suitable for integration into etch stop layers, dielectric cap layers and hardmask layers in interconnects of integrated circuits.Type: ApplicationFiled: July 12, 2010Publication date: February 10, 2011Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Laura M. Matz, Ping Jiang, William Wesley Dostalik, Ting Tsui
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Publication number: 20110027617Abstract: Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.Type: ApplicationFiled: June 3, 2010Publication date: February 3, 2011Inventors: Laura M. Matz, Xiangxin Rui, Xinjian Lei, Sunil Shanker, Moo-Sung Kim, Nobi Fuchigami, Iain Buchanan, Duong Anh, Sandra Malhotra, Imran Hashim