Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: A system and method are provided for etching semiconductor wafers (integrated circuit substrates) with advanced packaging using a two-step wet etching process. The first etch step uses an etchant that is non-selective to at least the wafer material (silicon) and metals, such as copper and titanium, that are present in the wafer. The second etch step uses an etchant that is selective to the wafer material (silicon) and has low selectivity for the metals, thereby leaving them at least substantially intact.

Abstract: An apparatus and method for controlling fluid discharge temperature on a semiconductor manufacturing tool. In this technique, the temperature is controlled via the use of refrigerative exhaust. This embodiment includes the hardware and controls to perform and monitor the described operation.

Abstract: An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.

Abstract: An apparatus and method for mixing fluids with degradational properties are disclosed herein. The present system has been devised to safely and accurately dilute, heat and deliver a degradable fluid while simultaneously removing extraneous vapor, adding capability to monitor the temperature and capability to monitor the concentration of the diluted fluid.

Abstract: An apparatus and method for mixing fluids with degradational properties are disclosed herein. The present system has been devised to safely and accurately dilute, heat and deliver a degradable fluid while simultaneously removing extraneous vapor, adding capability to monitor the temperature and capability to monitor the concentration of the diluted fluid.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: A system and method are provided for etching semiconductor wafers (integrated circuit substrates) with advanced packaging using a two-step wet etching process. The first etch step uses an etchant that is non-selective to at least the wafer material (silicon) and metals, such as copper and titanium, that are present in the wafer. The second etch step uses an etchant that is selective to the wafer material (silicon) and has low selectivity for the metals, thereby leaving them at least substantially intact.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: An apparatus and method for controlling fluid discharge temperature on a semiconductor manufacturing tool. In this technique, the temperature is controlled via the use of refrigerative exhaust. This embodiment includes the hardware and controls to perform and monitor the described operation.

Abstract: An apparatus and method to improve the plasma dicing and backmetal cleaving process on substrates through the use of pressurized deionized water (DI) dispense and specialized tooling.

Abstract: An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.

Abstract: The use of lead-free solder (flux) in Wafer Level Packaging applications requires more control of the temperature and environment during the reflow process. The flux needs to be applied by spin coating, reflowed in a controlled environment and then removed with a cleaning process. Incorporating these three processes in one compact system provides an efficient and economical solution. The unique design of the reflow oven consists of multiple hotplates and one cold plate, arranged in a circle to allow wafers to proceed through the oven in a rotary fashion.

Abstract: The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.

Abstract: An apparatus and method for mixing fluids with degradational properties are disclosed herein. The present system has been devised to safely and accurately dilute, heat and deliver a degradable fluid while simultaneously removing extraneous vapor, adding capability to monitor the temperature and capability to monitor the concentration of the diluted fluid.

Abstract: An apparatus for filtering dry film solvent includes a hollow vessel having a side wall, an open top end and a second end that includes a main outlet that allows fluid to flow out of a hollow interior of the vessel. A removable cover closes off the open top end of the vessel. The apparatus also includes at least one fluid inlet port formed along the side wall of the vessel and defining an entrance into the hollow interior of the vessel and at least one fluid outlet port formed along the side wall of the vessel and defining an exit from the hollow interior of the vessel. A removable filter member is disposed within the hollow interior and is defined by a frame and filter media that extends across the frame such fluid flowing into the hollow interior through the main inlet must flow through the filter media to reach the main outlet. The filter media is disposed at an angle other than 90 degrees relative to the frame of the filter member.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: The use of lead-free solder (flux) in Wafer Level Packaging applications requires more control of the temperature and environment during the reflow process. The flux needs to be applied by spin coating, reflowed in a controlled environment and then removed with a cleaning process. Incorporating these three processes in one compact system provides an efficient and economical solution. The unique design of the reflow oven consists of multiple hotplates and one cold plate, arranged in a circle to allow wafers to proceed through the oven in a rotary fashion.

Abstract: The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.