Patents by Inventor Laura Prine

Laura Prine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds
    Patent number: 8404205
    Abstract: The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: March 26, 2013
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation (MMC)
    Inventors: Laura Prine, Richard M. Halstead, Michael W. Keevan
  • APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING A REDUCED AMOUNT OF BORON COMPOUNDS BY FORMING PHOSPHORUS-BORON COMPOUNDS
    Publication number: 20120177559
    Abstract: The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
    Type: Application
    Filed: January 7, 2011
    Publication date: July 12, 2012
    Applicants: Mitsubishi Materials Corporation, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Laura Prine, Richard M. Halstead, Michael W. Keevan
  • METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES
    Publication number: 20120082609
    Abstract: The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 5, 2012
    Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Takeshi Kamei, Laura Prine, Takamasa Yasukawa, Yasuhiro Oda