Abstract: The present invention provides a method for creating patterns, with features down to the nanometer scale, in phase change materials using a heated probe. The heated probe contacts the phase change material thereby inducing a local phase change, resulting in a dramatic contrast in property—including electrical resistance, optical reflectance, and volume—relative to the uncontacted regions of the phase change material. The phase change material can be converted back to its original phase (i.e. the patterns can be erased) by appropriate thermal cycling.

Abstract: The present invention provides a method for creating patterns, with features down to the nanometer scale, in phase change materials using a heated probe. The heated probe contacts the phase change material thereby inducing a local phase change, resulting in a dramatic contrast in property—including electrical resistance, optical reflectance, and volume—relative to the uncontacted regions of the phase change material. The phase change material can be converted back to its original phase (i.e. the patterns can be erased) by appropriate thermal cycling.

Abstract: A method of making a semiconductor material by pretreating a semiconductor substrate having a native oxide on the substrate surface under vacuum with hydrogen plasma to remove and/or modify the native oxide. After plasma exposure, a high-k dielectric is deposited in-situ onto the substrate using atomic layer deposition. There is no break in the vacuum between the plasma exposure and the atomic layer deposition. Also disclosed is the related semiconductor/dielectric material stack.