Patents by Inventor Laura Stoeber

Laura Stoeber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a semiconductor device having a Schottky contact
    Patent number: 10763339
    Abstract: A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: September 1, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride
    Patent number: 10431698
    Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
    Type: Grant
    Filed: January 2, 2019
    Date of Patent: October 1, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Methods for Manufacturing a Semiconductor Device Having a Non-Ohmic Contact Formed Between a Semiconductor Material and an Electrically Conductive Contact Layer
    Publication number: 20190140111
    Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
    Type: Application
    Filed: January 2, 2019
    Publication date: May 9, 2019
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer
    Patent number: 10199514
    Abstract: An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: February 5, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Methods for Manufacturing a Semiconductor Device Having a Non-Ohmic Contact Formed Between a Semiconductor Material and an Electrically Conductive Contact Layer
    Publication number: 20180158964
    Abstract: An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.
    Type: Application
    Filed: January 9, 2018
    Publication date: June 7, 2018
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Method for Manufacturing a Semiconductor Device Having a Schottky Contact
    Publication number: 20160276452
    Abstract: A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.
    Type: Application
    Filed: February 10, 2016
    Publication date: September 22, 2016
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Method for Processing a Semiconductor Surface
    Publication number: 20160211140
    Abstract: A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber.
    Type: Application
    Filed: January 15, 2016
    Publication date: July 21, 2016
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Semiconductor Device and Method for Manufacturing a Semiconductor Device
    Publication number: 20160181441
    Abstract: A semiconductor device includes a semiconductor material having a bandgap larger than 2 eV and less than 10 eV, and a contact layer in contact with the semiconductor material. The contact layer includes a metal nitride. A non-ohmic contact is formed between the semiconductor material and the contact layer.
    Type: Application
    Filed: December 16, 2015
    Publication date: June 23, 2016
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber