Abstract: Articles for high temperature service, especially where enhanced strain tolerance coupled with resistance to ingested dust and debris (CMAS) is desirable, are provided herein. The article comprises a substrate and a multi-layered coating system disposed over the substrate. The coating system comprises a first layer comprising a first material and a second layer comprising a second material, with the first layer disposed between the second layer and the substrate. The second material is more resistant to infiltration by a nominal CMAS composition relative to 8 weight percent yttria-stabilized zirconia at a temperature of 1300 degrees Celsius. The second layer comprises a plurality of through-thickness cracks, wherein at least 90 percent of the cracks have a mean crack opening displacement, measured in a distal surface region, of up to about 5 micrometers.

Abstract: A method of forming an oxide coating for reducing the accumulation of radioactive species on a metallic surface exposed to fluids containing charged particles is disclosed. The method includes preparing an aqueous colloidal suspension containing about 0.5 to about 35 weight percent of nanoparticles that contain at least one of titania and zirconia, and about 0.1% to about 10% 2-[2-(2-methoxyethoxy)ethoxy]acetic acid (C7H14O5) or polyfluorosufonic acid in water, depositing the aqueous colloidal suspension on the metallic surface, drying the aqueous colloidal suspension to form a green coating, and then heating the green coating to a temperature of up to 500° C. to densify the green coating to form an oxide coating having a zeta potential less than or equal to the electrical polarity of the charged particles so as to minimize deposition of the charged particles on the metallic surface. The nanoparticles have a diameter of up to about 200 nanometers.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: Disclosed herein is an heat transfer device that includes a shell; the shell being an enclosure that prevents matter from within the shell from being exchanged with matter outside the shell; the shell having an outer surface and an inner surface; and a particle layer disposed on the inner surface of the shell; the particle layer having a thickness effective to enclose a region for transferring a fluid between opposing faces; the particle layer including a first layer and a second layer; the second layer being disposed upon the first layer; the first layer having average particle sizes of about 10 to about 10,000,000 nanometers; the second layer having average particle sizes of about 10 to about 10,000 nanometers.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: In some embodiments, the present invention is directed to nanoporous anodized aluminum oxide templates of high uniformity and methods for making same, wherein such templates lack a AAO barrier layer. In some or other embodiments, the present invention is directed to methods of electrodepositing nanorods in the nanopores of these templates. In still other embodiments, the present invention is directed to electrodepositing catalyst material in the nanopores of these templates and growing nanorods or other 1-dimensional nanostructures via chemical vapor deposition (CVD) or other techniques.