Abstract: A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations in the die identification region specifying a location of a respective die on the wafer.

Abstract: A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations in the die identification region specifying a location of a respective die on the wafer.

Abstract: A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations in the die identification region specifying a location of a respective die on the wafer.

Abstract: A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations in the die identification region specifying a location of a respective die on the wafer.

Abstract: This invention relates to a method for fabricating a color solid-state image sensor which comprises, the steps of: forming an inorganic passivation layer over an array of photosensing elements and their associate bonding patterns; providing a color filter array over the passivation layer; forming a photoresist layer over the color filter array and other exposed areas; forming a pattern in the photoresist such that portions over the bonding pad areas are opened; and removing selective regions of the passivation layer to expose the bonding pads.

Abstract: A process for stripping a color filter array coating from a substrate of a solid-state color image sensing device to recover the substrate so that it subsequently can be used to produce another solid-state color image sensing device, such process comprising contacting the coating with a stripping solution comprising chromic acid and sulfuric acid for a time effective to remove the coating from the substrate. The process efficiently removes all of the coating, even when the coating has been baked and hardened by various processing steps, and does not adversely affect the electrical properties of the device, the exposed bond pads, or the backside of the wafer.

Abstract: A color filter array is disclosed containing interlaid sets of laterally displaced filters comprised of a polymeric matrix and at least one dye. At least one of the sets of filters is comprised of an anionic dye and a cationic polymeric mordant having crosslinking repeating units containing two quaternary ammonium mordanting moieties and a photogenerated ethylenic crosslinking moiety.

Abstract: A photographically negative-working patternable mordant composition is disclosed containing a photocrosslinkable polymer comprised of, for providing both mordanting and crosslinking sites, repeating units of the formula: ##STR1## wherein Ar is an aromatic linking group,R is a methylene group,R.sup.1 is independently in each occurrence a lower alkyl group,R.sup.2 is a divalent linking group,X is a photocrosslinking group, andZ is a charge balancing counter ion.The mordant composition can be coated on a support to form a photographic element.

Abstract: A color filter array is disclosed comprised of red, green, and blue filters forming an interlaid pattern. Each of the red, green, and blue filters is formed of two superimposed filter layers, each made up of a different subtractive primary dye. Layers of controlled thickness containing a single dye permit precise control of filter density and hue. The color filter array can form part of a viewable display unit or form part of an image sensor.

Abstract: A device is disclosed comprising a non-planar semiconductor substrate and a planarizing layer thereon, the planarizing layer having a maximum thickness that is no greater than about 3.mu. and a planarization factor P.gtoreq.1.0. In a preferred embodiment, the layer comprises a polymer formed from a liquid monomer coated onto the substrate and thereafter polymerized.