Patents by Inventor Lauren DOYLE

Lauren DOYLE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Level with removable end cap
    Patent number: 11982543
    Abstract: A level with a removable end cap is provided. The level includes a hollow level body. The end cap includes an outer member and locking member received within the outer member. The locking member is inserted into the outer member pushing a moveable portion of the outer member into a frictional engagement that holds the end cap assembly in place relative to the level body.
    Type: Grant
    Filed: August 31, 2022
    Date of Patent: May 14, 2024
    Assignee: Milwaukee Electric Tool Corporation
    Inventors: Matthew Doyle, Fraizier Reiland, Lauren Weigel
  • EUV patterning methods, structures, and materials
    Patent number: 11984317
    Abstract: Techniques, structures, and materials related to extreme ultraviolet (EUV) lithography are discussed. Multiple patterning inclusive of first patterning a grating of parallel lines and second patterning utilizing EUV lithography to form plugs in the grating, and optional trimming of the plugs may be employed. EUV resists, surface treatments, resist additives, and optional processing inclusive of plug healing, angled etch processing, electric field enhanced post exposure bake are described, which provide improved processing reliability, feature definition, and critical dimensions.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: May 14, 2024
    Assignee: Intel Corporation
    Inventors: Marie Krysak, James Blackwell, Lauren Doyle, Brian Zaccheo, Patrick Theofanis, Michael Robinson, Florian Gstrein
  • Chain scission photoresists and methods for forming chain scission photoresists
    Patent number: 11846883
    Abstract: A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: December 19, 2023
    Assignee: Intel Corporation
    Inventors: Robert Bristol, Marie Krysak, Lauren Doyle, James Blackwell, Eungnak Han
  • Chain scission resist compositions for EUV lithography applications
    Patent number: 11262654
    Abstract: Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: March 1, 2022
    Assignee: Intel Corporation
    Inventors: Lauren Doyle, Marie Krysak, Patrick Theofanis, James Blackwell, Eungnak Han
  • EUV PATTERNING METHODS, STRUCTURES, AND MATERIALS
    Publication number: 20210375616
    Abstract: Techniques, structures, and materials related to extreme ultraviolet (EUV) lithography are discussed. Multiple patterning inclusive of first patterning a grating of parallel lines and second patterning utilizing EUV lithography to form plugs in the grating, and optional trimming of the plugs may be employed. EUV resists, surface treatments, resist additives, and optional processing inclusive of plug healing, angled etch processing, electric field enhanced post exposure bake are described, which provide improved processing reliability, feature definition, and critical dimensions.
    Type: Application
    Filed: May 5, 2021
    Publication date: December 2, 2021
    Applicant: Intel Corporation
    Inventors: Marie Krysak, James Blackwell, Lauren Doyle, Brian Zaccheo, Patrick Theofanis, Michael Robinson, Florian Gstrein
  • CHEMICAL COMPOSITIONS & METHODS OF PATTERNING MICROELECTRONIC DEVICE STRUCTURES
    Publication number: 20210371566
    Abstract: A chemical composition includes a polymer chain having a surface anchoring group at a terminus of the polymer chain. The surface anchoring group is metal or dielectric selective and the polymer chain further includes at least one of a photo-acid generator, quencher, or a catalyst. In some embodiments, the surface anchoring group is metal selective or dielectric selective. In some embodiments, the polymer chain includes side polymer chains where the side polymer chains include polymers of photo-acid generators, quencher, or catalyst.
    Type: Application
    Filed: May 6, 2021
    Publication date: December 2, 2021
    Applicant: Intel Corporation
    Inventors: Eungnak Han, Gurpreet Singh, Tayseer Mahdi, Florian Gstrein, Lauren Doyle, Marie Krysak, James Blackwell, Robert Bristol
  • CHAIN SCISSION RESIST COMPOSITIONS FOR EUV LITHOGRAPHY APPLICATIONS
    Publication number: 20210200085
    Abstract: Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 1, 2021
    Applicant: Intel Corporation
    Inventors: Lauren Doyle, Marie Krysak, Patrick Theofanis, James Blackwell, Eungnak Han
  • CHAIN SCISSION PHOTORESISTS AND METHODS FOR FORMING CHAIN SCISSION PHOTORESISTS
    Publication number: 20200103754
    Abstract: A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.
    Type: Application
    Filed: September 28, 2018
    Publication date: April 2, 2020
    Inventors: Robert BRISTOL, Marie KRYSAK, Lauren DOYLE, James BLACKWELL, Eungnak HAN