Patents by Inventor Laurence C. Olver

Laurence C. Olver has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
    Patent number: 4679311
    Abstract: A method of fabricating a self-aligned field-effect transistor having a T-shaped gate electrode and a sub-micron gate length. In the method of the present invention, a multi-layer gate structure is formed on an active region formed in a semiconductor substrate. A first aluminum layer of the gate structure, which is adjacent to the active region, is selectively etched to form a T-shaped gate electrode. The etching provides the first layer of the gate electrode with a gate length of less than 0.75 microns, and the T-shaped gate electrode is used as a shadow-mask to deposit self-aligned source and drain electrodes.
    Type: Grant
    Filed: December 12, 1985
    Date of Patent: July 14, 1987
    Assignee: Allied Corporation
    Inventors: Amir A. Lakhani, Laurence C. Olver