Abstract: Arousal of a patient is enhanced and wakefulness modulated by neurostimulation. Bioelectrical activity of the nervous system of the patient is monitored and characteristics of the monitored bioelectrical activity associated with a state of reduced arousal and/or wakefulness are detected. In response to such characteristics, stimulation signals selected to arouse the patient are generated and supplied to stimulation transducers to stimulate a neural network of a patient associated with arousal.

Abstract: A reversible portable moisture removal system for drying a structure or wall cavity without creating holes in the structure or wall cavity. The system has a moisture removal housing, which comprises an intake means, a blower, an air heater, a pressure controller and an outlet port. The system also has a docketing station connected to a flexible conduit for flowing pressurized heated air at a targeted location and for creating a vacuum to withdraw moist air from the structure or wall cavity to the moisture removal housing.

Abstract: A method for drying or removing water from a wall cavity or structure without the need to tear to make holes, tear apart the structure, or use suction cups. The method uses a reversible portable moisture removal system for flowing pressurized heated air at a targeted location and for creating a vacuum to withdraw moist air from the wall cavity or structure a the moisture removal housing. The method dries wet walls in less time than current systems while also being reversible to remove moist air from wall cavities and structures.

Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: A biomass fired boiler having a series of inverted U-shaped exhaust gas flues. Water from a collection tank is pumped and sprayed onto deflection plates in the towers. The exhaust gases progressively commingle with the droplets to extract heat energy and collect contaminants at the tank until all the smoke has been absorbed into the water. The heated water is re-directed through a thermal exchanger of the heat transfer system and heat energy is reclaimed. Floating and/or suspended contaminants are filtered and/or collected and appropriately removed and/or incinerated.

Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiOxHy layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic oxide, high-K dielectric layer on the substantially-hydroxylated SiOxHy layer. The substantially-hydroxylated SiOxHy layer has a surface concentration of hydroxyl (OH) species equal to or greater than about 3×1014 hydroxyl per cm2.

Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: A process for forming a silicon oxynitride layer in an N.sub.2 atmosphere is disclosed. The silicon oxynitride layer is formed by heating a silicon substrate in an N.sub.2 atmosphere for a period of time that is sufficient to form a nitrided layer with a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 therein. Afterward, the substrate is further oxidized in an oxygen containing atmosphere for a period of time sufficient to form a silicon oxynitride layer on the substrate with a thickness of at least about 1 nm and a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 on the wafer.

Abstract: A wafer holder for maintaining a semiconductor wafer at a constant temperature during film deposition is disclosed. The wafer holder is configured to have one or more quartz arms. Affixed to each arm is at least one quartz support, whose top end is adapted for holding the semiconductor wafer. The top end of each support is tapered to have a diameter smaller than that of the quartz support and is optionally tapered to a point. A thermal mass element is optionally supported on the arms of the wafer holder, to keep uniform, the temperature at the perimeter of the wafer with respect to the rest of the semiconductor wafer during a material layer deposition. Also, a quartz backstop is optionally attached to each support arm to keep the semiconductor wafer positioned on top of the quartz supports when the wafer holder is rotated.

Abstract: The present invention is directed to a process for fabricating a semiconductor integrated circuit device, and specifically, a process for cleaning a silicon substrate before gate silicon dioxide is formed on the silicon substrate. The gate silicon dioxide is used to form transistor gates. The process of the present invention provides a silicon/silicon dioxide interface and the bulk silicon dioxide with advantageous electrical properties. In the present process, the silicon substrate is first subjected to a stream of hydrofluoric acid (HF) vapor. The vapor HF stream is a mixture of anhydrous HF, methanol, and nitrogen. Following this, the substrate is subjected to gaseous chlorine that has been irradiated with broad band UV radiation. After the substrate has been cleaned according to the present process, a layer of silicon dioxide is grown thereon using conventional techniques such as rapid thermal oxidation (RTO).

Abstract: Disclosed is a drum sander having a frame with a workpiece support surface thereon. A motor is mounted on the upper end of the frame over the workpiece support surface. An arbor extends between the motor and a supporting thrust bearing to intersect the workpiece support surface. The arbor is preferably provided with a sleeve which is slidable along the arbor so as to expose different portions of the abrasive surface of the sleeve. The abrasive surface such as sandpaper is preferably adhered to the outside cylindrical surface of the sleeve. Securement mechanisms are used to securely fix the axial position of the sleeve along the arbor. The drum sander can alternatively be fitted with a file which rests within an insert mounted in the workpiece support surface in lieu of the arbor and sleeve arrangement.