Abstract: The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.

Abstract: A vertical power component includes a semiconductor substrate, a first electrode in contact with a lower surface of the substrate, and a second electrode in contact with an upper surface of the substrate. The vertical component is mounted to a metal connection plate via a metal spacer. The metal spacer includes a lower surface soldered to the metal connection plate and an upper surface soldered to the first electrode of the vertical power component. The metal spacer is made of a same metal as the metal connection plate. A surface are of the metal spacer mounted to the first electrode is smaller than a surface area of the first electrode.

Abstract: A method for encapsulating a thin-film lithium-ion type battery, including the steps of: forming, on a substrate, an active stack having as a lower layer a cathode collector layer extending over a surface area larger than the surface area of the other layers; forming, over the structure, a passivation layer including through openings at locations intended to receive anode collector and cathode collector contacts; forming first and second separate portions of an under-bump metallization, the first portions being located on the walls and the bottom of the openings, the second portions covering the passivation layer; and forming an encapsulation layer over the entire structure.

Abstract: A method for encapsulating electronic components, including the steps of: forming, in a first surface of a semiconductor wafer, electronic components; forming, on the first surface, an interconnection stack including conductive tracks and vias separated by an insulating material; forming first and second bonding pads on the interconnection stack; thinning down the wafer, except at least on its contour; filling the thinned-down region with a first resin layer; arranging at least one first chip on the first bonding pads and forming solder bumps on the second bonding pads; depositing a second resin layer covering the first chips and partially covering the solder bumps; bonding an adhesive strip on the first resin layer; and scribing the structure into individual chips.

Abstract: A method for encapsulating electronic components, including the steps of: forming, in a first surface of a semiconductor wafer, electronic components; forming, on the first surface, an interconnection stack including conductive tracks and vias separated by an insulating material; forming first and second bonding pads on the interconnection stack; thinning down the wafer, except at least on its contour; filling the thinned-down region with a first resin layer; arranging at least one first chip on the first bonding pads and forming solder bumps on the second bonding pads; depositing a second resin layer covering the first chips and partially covering the solder bumps; bonding an adhesive strip on the first resin layer; and scribing the structure into individual chips.

Abstract: A silicon chip surface mounted via balls attached to its front surface, wherein the front and rear surfaces of the chip are covered with a thermosetting epoxy resin having the following characteristics: the resin contains a proportion ranging from 45 to 60% by weight of a load formed of carbon fiber particles with a maximum size of 20 ?m and with its largest portion having a diameter ranging between 2 and 8 ?m, on the front surface side, the loaded resin covers from 45 to 60% of the ball height, on the rear surface side, the loaded resin has a thickness ranging between 80 and 150 ?m.

Abstract: A method for encapsulating electronic components, including the steps of: forming, in a first surface of a semiconductor wafer, electronic components; forming, on the first surface, an interconnection stack including conductive tracks and vias separated by an insulating material; forming first and second bonding pads on the interconnection stack; thinning down the wafer, except at least on its contour; filling the thinned-down region with a first resin layer; arranging at least one first chip on the first bonding pads and forming solder bumps on the second bonding pads; depositing a second resin layer covering the first chips and partially covering the solder bumps; bonding an adhesive strip on the first resin layer; and scribing the structure into individual chips.

Abstract: Described is an anti-condensation method for an aircraft (13), wherein part of a stream of cold air is withdrawn, the part of a stream of cold air is heated, and the part of the stream of hot air is introduced into the crown (19) of the aircraft (13) through an air introduction duct (8). Also described is an anti-condensation device called “Air Dryer System”.

Abstract: A method for encapsulating electronic components, including the steps of: forming, in a first surface of a semiconductor wafer, electronic components; forming, on the first surface, an interconnection stack including conductive tracks and vias separated by an insulating material; forming first and second bonding pads on the interconnection stack; thinning down the wafer, except at least on its contour; filling the thinned-down region with a first resin layer; arranging at least one first chip on the first bonding pads and forming solder bumps on the second bonding pads; depositing a second resin layer covering the first chips and partially covering the solder bumps; bonding an adhesive strip on the first resin layer; and scribing the structure into individual chips.

Abstract: A method for encapsulating a thin-film lithium-ion type battery, including the steps of: forming, on a substrate, an active stack having as a lower layer a cathode collector layer extending over a surface area larger than the surface area of the other layers; forming, over the structure, a passivation layer including through openings at locations intended to receive anode collector and cathode collector contacts; forming first and second separate portions of an under-bump metallization, the first portions being located on the walls and the bottom of the openings, the second portions covering the passivation layer; and forming an encapsulation layer over the entire structure.

Abstract: A silicon chip surface mounted via balls attached to its front surface, wherein the front and rear surfaces of the chip are covered with a thermosetting epoxy resin having the following characteristics: the resin contains a proportion ranging from 45 to 60% by weight of a load formed of carbon fiber particles with a maximum size of 20 ?m and with its largest portion having a diameter ranging between 2 and 8 ?m, on the front surface side, the loaded resin covers from 45 to 60% of the ball height, on the rear surface side, the loaded resin has a thickness ranging between 80 and 150 ?m.